Si-Si bonded wafers offer a cost effective alternative to thick EPI layers and inverse EPI that have traditionally been used for applications such as power devices and PiN diodes.

We offer advanced wafer bonding technology which allows the production of silicon substrates with one or more step changes in doping type and level. Adjacent layers may range from 0,001 Ohmcm to 10.000 Ohmcm and could be N-type or P-type without experiencing auto-doping problems as conventional EPI shows. The layers have a very low defect density, consistent with those found in normal bulk single crystal silicon and also low wafer warpage. 

Si-Si bonded wafers are ideally suited to applications such as PIN Diode or high voltage IGBT manufacturing, where thick lightly doped EPI layers are required on heavily doped substrates and also where the EPI layer must be of very high quality. Fast response and switching can be obtained without the need for expensive irradiation.
Conventional SOI technology is giving an improved thickness control (± 0,5 µm or ± 1 µm) irrespective of layer thickness on the upper layer compared with what conventional EPI can offer on thick layers.

Basic PiN diode substratePT-IGBT substrate  

For micromachining developers the Si-Si bonded wafers offer another option to achieve single crystal layers with different orientations and doping levels, enabling unique structures to be created.

Typische Spezifikation: Device Layer: Handle Layer:
Thickness 2 µm - 200 µm (± 0,5/1µm) 350 µm - 700 µm (± 0,5 µm)
Dopand P/Bor, N/Ph, N/As, N/Sb P/Bor, N/Ph, N/As, N/Sb
Resistivity > 0,007 µm > 0,007 µm
Growth Method CZ, FZ CZ, FZ
Crystal Orientation <100>, <111> <100>, <111>
Buried Layer Implant P-Type, N-Type  
Backside Finish   Lapped, Etched, Polished


Key Features:

  • High quality
  • Low cost
  • Low Si-crystal defect density versus existing EPI levels
  • Excellent layer uniformity
  • Multiple layers
  • Sharp transitions
  • Layer resistivities up to 10.000 Ohmcm
  • Excellent interface quality
  • Variations in crystal orientation and growth possible
  • Low leakage current and sharp junctions


  • Replacement for thick layer EPI deposition
  • High voltage PIN diodes
  • RF attenuators
  • PT IGBT's
  • Photodetectors
  • X-ray detectors
  • IR sensors
  • High voltage power devices