TABELLE - ABC GmbH

Unsere Siliziumwafer Lagerliste

Wir, die Active Business Company GmbH, sowie unsere langjährigen Partner, betreiben eine strategische Vertriebspartnerschaft. Aus diesem Grunde existieren direkte Zugriffe auf die Siliziumwafer Lager unserer Partner, welche eine kurzfristige Lieferung ermöglicht. Sie erhalten im Normalfall die Siliziumwafer innerhalb nur einer Woche frei Haus geliefert.

Unsere Lagerliste enthält eine große Auswahl unterschiedlicher Siliziumwafer Spezifikationen in gewohnter Qualität. Durch unsere komfortable Online Such- und Filterfunktion gelangen Sie schnell zu den Siliziumwafern, die Ihren Anforderungen genügen.

Umfangreiche Suchfunktionen helfen Ihnen die passenden Siliziumwafer zu finden. Die Filtermöglichkeiten beinhalten alle wesentlichen Spezifikationen wie Durchmesser, Typ und Dotierung, den spezifischen Widerstand, die Dicke sowie die Oberflächenbeschaffenheit der Siliziumwafer. Nach jeder Selektierung aktualisiert sich die Lagerlisten-Tabelle automatisch. Durch einen Klick auf „mehr“ erhalten Sie Zugriff auf die vollständige verfügbare Spezifikation.

Um eine gewählte Spezifikation zu ändern, genügt ein Klick auf den gewählten Filter unterhalb der jeweils ausgewählten Spezifikation.

Darüber hinaus besteht die Möglichkeit die Siliziumwafer Lagerliste zu sortieren. Ein einfacher Klick in das entsprechende Feld des Kriteriums (z.B. Qty Available, Diameter, Material usw.) in der ersten Zeile der Tabelle führt die Filterfunktion aus.

Ein zusätzliches Suchfeld unterstützt Sie bei der weiteren Eingrenzung der Siliziumwafer – Lagerliste.

Nach der erfolgreichen Suche Ihrer Siliziumwafer können Sie uns Ihre Anfrage direkt über den Button „Anfrage senden“ bequem per Email zusenden. Sollten Sie die Wafer noch zusätzlich durch eine Beschichtung (Silizium Oxid, Silizium Nitrid, Kupfer, Titan, Gold oder andere) oder durch das Zuschneiden oder Dünnen veredeln wollen, können Sie diese Information bequem in der Anfrage noch ergänzen.

Die Mindestbestellmenge (MOQ) liegt bei eine Waferkassette und somit bei 25 Stück. Ausnahmen hiervon sind sogenannte Partial Cassettes, sprich Siliziumwafer – Kassetten, die nur zum Teil gefüllt sind. In diesen Fällen beträgt die Mindestbestellmenge der Menge in den jeweiligen Kassetten.

Nach Erhalt Ihrer Anfrage wird diese umgehend bearbeitet. In Kürze senden wir Ihnen das entsprechende Angebot zu.

Sollten Sie hier keine passenden Wafer finden, können Sie uns über unser Kontaktformular gerne eine Anfrage zusenden.

Alle Filter zurücksetzen




	Anfrage Mehr Qty Available Diameter Material Type Dopant Orientation Res. (Min) Res. (Max) Thickness (Min) Thickness (Max) Grade Finish Flat Film Film Thickness Particle Count Particle Size TTV Bow Warp Lasermark Description




	Anfrage senden 829 2" CZ N Phosphorus <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 None Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 719 2" CZ N Phosphorus <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 Ohmcm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 1035 2" CZ N Phosphorus <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 473 2" CZ P Boron <100> 0.01 0.02 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 254 - 304 µm

TTV:  <10 µm

Particles: <10@.5 µm


	Anfrage senden 18 2" CZ P Boron <100> 1 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Anfrage senden 750 2" CZ P Boron <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 633 2" CZ P Boron <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Anfrage senden 576 2" CZ P Boron <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 37 3" CZ N Phosphorus <100> 1 5 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 200 3" CZ N Phosphorus <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 33 3" CZ N Phosphorus <100> 10 20 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 10 3" CZ N Phosphorus <100> 5 10 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 44 3" CZ P Boron <100> 1 10 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI Flats

Type/Dopant: p/Boron

Res: 1 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm 

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 255 3" CZ P Boron <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 12 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 415 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 398 100 mm CZ N Phosphorus <100> 1 10 500 550 Prime DSP 2 SEMI Flats 10 0.5 10 40 None Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@.5 µm


	Anfrage senden 464 100 mm CZ N Phosphorus <100> 1 5 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 213 100 mm CZ N Phosphorus <100> 10 20 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 445 100 mm CZ N Phosphorus <100> 5 10 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 159 100 mm CZ P Boron <100> 0.01 0.02 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 196 100 mm CZ P Boron <100> 0 0.005 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: <0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 25 150 mm CZ P Boron <100> 1 100 600 650 Test SSP JEIDA Flat 30 0.3 6" P<100> 1-100 OHM

600-650um SSP

Jeida Flat


	Anfrage senden 48 125 mm CZ N Antimony <100> 0.01 0.02 500 550 Prime SSP 1 SEMI Flat Oxide Backseal Frontside M13 Scribe Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Oxide backseal

Lasermark: Frontside M13


	Anfrage senden 95 125 mm CZ N Arsenic <111> Off 4° 0.004 500 550 Prime SSP 1 SEMI Flat None Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> Off 4°

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: <0.004 ohm-cm

Thickness: 500 - 550 µm


	Anfrage senden 96 125 mm CZ P Boron <111> 0.008 0.02 500 550 Prime SSP 1 SEMI Flat Poly Si Back Frontside Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 3°

Flats: 1 SEMI standard

Type/Dopant: p/Boron

Res: 0.008 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13


	Anfrage senden 38 150 mm CZ N Arsenic <100> 0.001 0.003 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 1-0-0

Type/Dopant: n/Arsenic

Res: <0.003 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Back scribe


	Anfrage senden 200 150 mm CZ N Arsenic <100> 0.002 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.002 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Anfrage senden 725 150 mm CZ N Arsenic <100> 0.004 0.007 483 533 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.004 - 0.007 ohm-cm

Thickness: 483 - 533 µm

Films: Oxide backseal

Lasermark: Front scribe   


	Anfrage senden 172 150 mm CZ N Antimony <100> 0.007 0.02 600 650 Prime 1 SEMI Flat Oxide Backseal None Diameter: 150mm 

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 600 - 650 µm

Films: Oxide backseal


	Anfrage senden 23 150 mm CZ N Antimony <100> 0.008 0.025 500 550 Prime 1 SEMI Flat Poly Si/Oxide Back None 6" N/Sb <100> .008-.025 ohm-cm

500-550um Epi Wafers

Poly/Ox Back

No Scribe

Semi Flat on the 1-1-0  


	Anfrage senden 75 150 mm CZ N Antimony <100> 0.01 0.025 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.025 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Front scribe


	Anfrage senden 25 150 mm CZ N Antimony <100> 0.01 0.02 350 400 Epi SSP 1 SEMI Flat Poly Si/Oxide Back Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 350 - 400 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 25 150 mm CZ N Arsenic <100> 0.0001 0.0044 500 550 Prime SSP JEIDA Flat Poly Si/Oxide Back 20 0.3 10 40 None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat

Type/Dopant: n/Arsenic

Res: 0.0001 - 0.0044 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 25 150 mm CZ N Antimony <111> 0.008 0.016 440 490 Epi JEIDA Flat Poly Si/Oxide Back 6" N/Sb <111> .008-.016 ohm

440-490um EPI Wafers

Jeida flat on the 1-1-0

Poly/Ox Back


	Anfrage senden 24 150 mm CZ N Antimony <111> 0.008 0.017 600 650 Prime SSP 1 SEMI Flat Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> 

Flats: 1 SEMI standard on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.017 ohm-cm

Thickness: 600 - 650 µm


	Anfrage senden 596 150 mm CZ P Boron <100> 0.0018 0.003 550 600 Prime Flat on the 1-0-0 Poly Si/Oxide Back Frontside M13 Scribe Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0018 - 0.003 ohm-cm

Thickness: 550 - 600 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13 Scribe


	Anfrage senden 125 150 mm CZ P Boron <100> 0.0001 0.005 650 700 Epi SSP 1 Flat Non-SEMI Poly Si/Oxide Back 6000 30 0.3 5 85 Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Front scribe

Films: Poly Si/Oxide backesal


	Anfrage senden 1275 150 mm CZ P Boron <100> 0.0001 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Anfrage senden 32 150 mm CZ P Boron <100> 5 10 495 555 Epi SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 495 - 555 µm


	Anfrage senden 24 150 mm CZ P Boron <100> 70 100 525 575 Prime SSP JEIDA Flat 40 0.16 3 3 17 None 6" P<100> 70-100 ohm-cm

525-575um SSP Wafers

No Scribe

Jeida flat on the 1-1-0


	Anfrage senden 25 150 mm CZ P Boron <100> Off 4° 70 100 525 575 Prime SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 4°

Flats: JEIDA flat on the 1-1-0

Type/Dopant: P/boron 

Res: 70 - 100 ohm-cm

Thickness: 525 - 575 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 749 150 mm CZ P Boron <100> 5 10 505 535 Epi JEIDA Flat Backside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

Lasermark: Back scribe


	Anfrage senden 50 150 mm CZ P Boron <111> Off 4° 0.008 0.015 600 650 Prime SSP 1 SEMI Flat Poly Si/Oxide Back 6000 12 0.3 10 50 50 Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 4°

Flats: 1 SEMI standard flat on the 0-1-1

Type/Dopant: p/Boron

Res: 0.008 - 0.015 ohm-cm

Thickness: 600 - 650 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Anfrage senden 65 200 mm CZ N Red Phosphorus <100> 0.001 0.002 700 750 Epi SSP Notch Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: 0.001 - 0.002 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal

Epi Res: 0.1 - 0.2 ohm-cm

Epi Thickness: 4 - 6 µm


	Anfrage senden 50 200 mm CZ N Antimony <100> 0.007 0.025 700 750 Prime 1 SEMI Flat Oxide Backseal Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.025 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal


	Anfrage senden 50 200 mm CZ N Antimony <100> 0.007 0.02 700 750 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Anfrage senden 25 200 mm CZ N Antimony <100> 0.008 0.03 700 750 Prime SSP Notch Poly Si Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Antimony

Res: .008-.03 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si backseal


	Anfrage senden 275 200 mm CZ N Red Phosphorus <100> 0.0012 0.0017 700 750 Prime Non-SEMI Notch Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: <0.0017 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal




	Anfrage senden 50 200 mm CZ N Red Phosphorus <100> 0.0017 0.0029 700 750 Prime Notch on the 0-1-0 Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Notch on the 0-1-0

Type/Dopant: n/Red Phosphorus

Res: 0.0017-.0029 ohm-cm

Thickness: 700-750 µm

Poly/Ox Back

No Scribe


	Anfrage senden 37 200 mm CZ N Arsenic <100> Off 2° 0.001 0.0045 700 750 Prime Notch Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 2°

Flats: Notch on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.001 - 0.0045 ohm-cm

Thickness: 700 - 750 µm

Films: Oxide backseal  


	Anfrage senden 3 200 mm CZ N Phosphorus <100> 1 10 700 750 Prime DSP Notch on the 1-1-0 10 0.12 1 10 10 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 17 200 mm CZ N Phosphorus <100> 20 40 700 750 Prime DSP Notch on the 0-0-1 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 0-0-1

Type/Dopant: n/Phosphorus

Res: 20 - 40 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 26 200 mm CZ N Phosphorus <100> 25 50 700 750 Prime DSP Notch on the 1-0-0 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Phosphorus

Res: 25 - 50 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 25 200 mm CZ N Phosphorus <100> 6 12 650 700 Epi Notch Poly Si/Oxide Back Backside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 6 - 12 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Anfrage senden 50 200 mm CZ P Boron <100> 0.005 0.01 700 750 Epi DSP 1 SEMI Flat Oxide Backseal 3500 2 0 34 Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: p/Boron

Res: 0.005 - 0.01 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Anfrage senden 25 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-1-0 Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Frontside

Films: Poly/Oxide backseal

Epi Res: 28-42 ohm-cm

Epi Thickness: 14.25-15.75 µm


	Anfrage senden 15 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-0-0 Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Backside

Films: Oxide backseal

Epi Res: 2.5-3.5 ohm-cm

Epi Thickness: 5.6-6.4 µm


	Anfrage senden 150 200 mm CZ P Boron <100> 3 30 700 750 Prime SSP JEIDA Flat 100 0.16 3 20 Any Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 3-30 ohm-cm

Thickness: 695-755 µm

Lasermark: Optional


	Anfrage senden 31 200 mm CZ P Boron <100> 8 12 700 750 Prime DSP JEIDA Flat 50 0.065 Frontside HOLD FOR QUOTE 034457 po IN ROUTE

Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8.5-11.5 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front Scribe


	Anfrage senden 9 200 mm CZ P Boron <100> 8 12 700 750 Prime SSP JEIDA Flat Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Jeida Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8 - 12 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Buff Back


	Anfrage senden 1 200 mm CZ P Boron <100> 750 3500 700 750 SOI DSP Notch Oxide Backseal Notch Backside Diameter: 200mm 

Growth Method: CZ

Grade: SOI

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: 750 - 3,500 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal




	Anfrage Mehr Qty Available Diameter Material Type Dopant Orientation Res. (Min) Res. (Max) Thickness (Min) Thickness (Max) Grade Finish Flat Film Film Thickness Particle Count Particle Size TTV Bow Warp Lasermark Description




	Anfrage senden 829 2" CZ N Phosphorus <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 None Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 719 2" CZ N Phosphorus <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 Ohmcm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 1035 2" CZ N Phosphorus <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 473 2" CZ P Boron <100> 0.01 0.02 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 254 - 304 µm

TTV:  <10 µm

Particles: <10@.5 µm


	Anfrage senden 18 2" CZ P Boron <100> 1 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Anfrage senden 750 2" CZ P Boron <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 633 2" CZ P Boron <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Anfrage senden 576 2" CZ P Boron <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 37 3" CZ N Phosphorus <100> 1 5 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 200 3" CZ N Phosphorus <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 33 3" CZ N Phosphorus <100> 10 20 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 10 3" CZ N Phosphorus <100> 5 10 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 44 3" CZ P Boron <100> 1 10 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI Flats

Type/Dopant: p/Boron

Res: 1 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm 

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 255 3" CZ P Boron <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 12 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 415 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 398 100 mm CZ N Phosphorus <100> 1 10 500 550 Prime DSP 2 SEMI Flats 10 0.5 10 40 None Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@.5 µm


	Anfrage senden 464 100 mm CZ N Phosphorus <100> 1 5 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 213 100 mm CZ N Phosphorus <100> 10 20 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 445 100 mm CZ N Phosphorus <100> 5 10 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 159 100 mm CZ P Boron <100> 0.01 0.02 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 196 100 mm CZ P Boron <100> 0 0.005 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: <0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 25 150 mm CZ P Boron <100> 1 100 600 650 Test SSP JEIDA Flat 30 0.3 6" P<100> 1-100 OHM

600-650um SSP

Jeida Flat


	Anfrage senden 48 125 mm CZ N Antimony <100> 0.01 0.02 500 550 Prime SSP 1 SEMI Flat Oxide Backseal Frontside M13 Scribe Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Oxide backseal

Lasermark: Frontside M13


	Anfrage senden 95 125 mm CZ N Arsenic <111> Off 4° 0.004 500 550 Prime SSP 1 SEMI Flat None Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> Off 4°

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: <0.004 ohm-cm

Thickness: 500 - 550 µm


	Anfrage senden 96 125 mm CZ P Boron <111> 0.008 0.02 500 550 Prime SSP 1 SEMI Flat Poly Si Back Frontside Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 3°

Flats: 1 SEMI standard

Type/Dopant: p/Boron

Res: 0.008 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13


	Anfrage senden 38 150 mm CZ N Arsenic <100> 0.001 0.003 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 1-0-0

Type/Dopant: n/Arsenic

Res: <0.003 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Back scribe


	Anfrage senden 200 150 mm CZ N Arsenic <100> 0.002 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.002 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Anfrage senden 725 150 mm CZ N Arsenic <100> 0.004 0.007 483 533 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.004 - 0.007 ohm-cm

Thickness: 483 - 533 µm

Films: Oxide backseal

Lasermark: Front scribe   


	Anfrage senden 172 150 mm CZ N Antimony <100> 0.007 0.02 600 650 Prime 1 SEMI Flat Oxide Backseal None Diameter: 150mm 

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 600 - 650 µm

Films: Oxide backseal


	Anfrage senden 23 150 mm CZ N Antimony <100> 0.008 0.025 500 550 Prime 1 SEMI Flat Poly Si/Oxide Back None 6" N/Sb <100> .008-.025 ohm-cm

500-550um Epi Wafers

Poly/Ox Back

No Scribe

Semi Flat on the 1-1-0  


	Anfrage senden 75 150 mm CZ N Antimony <100> 0.01 0.025 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.025 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Front scribe


	Anfrage senden 25 150 mm CZ N Antimony <100> 0.01 0.02 350 400 Epi SSP 1 SEMI Flat Poly Si/Oxide Back Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 350 - 400 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 25 150 mm CZ N Arsenic <100> 0.0001 0.0044 500 550 Prime SSP JEIDA Flat Poly Si/Oxide Back 20 0.3 10 40 None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat

Type/Dopant: n/Arsenic

Res: 0.0001 - 0.0044 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 25 150 mm CZ N Antimony <111> 0.008 0.016 440 490 Epi JEIDA Flat Poly Si/Oxide Back 6" N/Sb <111> .008-.016 ohm

440-490um EPI Wafers

Jeida flat on the 1-1-0

Poly/Ox Back


	Anfrage senden 24 150 mm CZ N Antimony <111> 0.008 0.017 600 650 Prime SSP 1 SEMI Flat Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> 

Flats: 1 SEMI standard on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.017 ohm-cm

Thickness: 600 - 650 µm


	Anfrage senden 596 150 mm CZ P Boron <100> 0.0018 0.003 550 600 Prime Flat on the 1-0-0 Poly Si/Oxide Back Frontside M13 Scribe Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0018 - 0.003 ohm-cm

Thickness: 550 - 600 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13 Scribe


	Anfrage senden 125 150 mm CZ P Boron <100> 0.0001 0.005 650 700 Epi SSP 1 Flat Non-SEMI Poly Si/Oxide Back 6000 30 0.3 5 85 Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Front scribe

Films: Poly Si/Oxide backesal


	Anfrage senden 1275 150 mm CZ P Boron <100> 0.0001 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Anfrage senden 32 150 mm CZ P Boron <100> 5 10 495 555 Epi SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 495 - 555 µm


	Anfrage senden 24 150 mm CZ P Boron <100> 70 100 525 575 Prime SSP JEIDA Flat 40 0.16 3 3 17 None 6" P<100> 70-100 ohm-cm

525-575um SSP Wafers

No Scribe

Jeida flat on the 1-1-0


	Anfrage senden 25 150 mm CZ P Boron <100> Off 4° 70 100 525 575 Prime SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 4°

Flats: JEIDA flat on the 1-1-0

Type/Dopant: P/boron 

Res: 70 - 100 ohm-cm

Thickness: 525 - 575 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 749 150 mm CZ P Boron <100> 5 10 505 535 Epi JEIDA Flat Backside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

Lasermark: Back scribe


	Anfrage senden 50 150 mm CZ P Boron <111> Off 4° 0.008 0.015 600 650 Prime SSP 1 SEMI Flat Poly Si/Oxide Back 6000 12 0.3 10 50 50 Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 4°

Flats: 1 SEMI standard flat on the 0-1-1

Type/Dopant: p/Boron

Res: 0.008 - 0.015 ohm-cm

Thickness: 600 - 650 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Anfrage senden 65 200 mm CZ N Red Phosphorus <100> 0.001 0.002 700 750 Epi SSP Notch Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: 0.001 - 0.002 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal

Epi Res: 0.1 - 0.2 ohm-cm

Epi Thickness: 4 - 6 µm


	Anfrage senden 50 200 mm CZ N Antimony <100> 0.007 0.025 700 750 Prime 1 SEMI Flat Oxide Backseal Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.025 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal


	Anfrage senden 50 200 mm CZ N Antimony <100> 0.007 0.02 700 750 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Anfrage senden 25 200 mm CZ N Antimony <100> 0.008 0.03 700 750 Prime SSP Notch Poly Si Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Antimony

Res: .008-.03 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si backseal


	Anfrage senden 275 200 mm CZ N Red Phosphorus <100> 0.0012 0.0017 700 750 Prime Non-SEMI Notch Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: <0.0017 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal




	Anfrage senden 50 200 mm CZ N Red Phosphorus <100> 0.0017 0.0029 700 750 Prime Notch on the 0-1-0 Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Notch on the 0-1-0

Type/Dopant: n/Red Phosphorus

Res: 0.0017-.0029 ohm-cm

Thickness: 700-750 µm

Poly/Ox Back

No Scribe


	Anfrage senden 37 200 mm CZ N Arsenic <100> Off 2° 0.001 0.0045 700 750 Prime Notch Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 2°

Flats: Notch on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.001 - 0.0045 ohm-cm

Thickness: 700 - 750 µm

Films: Oxide backseal  


	Anfrage senden 3 200 mm CZ N Phosphorus <100> 1 10 700 750 Prime DSP Notch on the 1-1-0 10 0.12 1 10 10 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 17 200 mm CZ N Phosphorus <100> 20 40 700 750 Prime DSP Notch on the 0-0-1 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 0-0-1

Type/Dopant: n/Phosphorus

Res: 20 - 40 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 26 200 mm CZ N Phosphorus <100> 25 50 700 750 Prime DSP Notch on the 1-0-0 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Phosphorus

Res: 25 - 50 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 25 200 mm CZ N Phosphorus <100> 6 12 650 700 Epi Notch Poly Si/Oxide Back Backside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 6 - 12 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Anfrage senden 50 200 mm CZ P Boron <100> 0.005 0.01 700 750 Epi DSP 1 SEMI Flat Oxide Backseal 3500 2 0 34 Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: p/Boron

Res: 0.005 - 0.01 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Anfrage senden 25 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-1-0 Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Frontside

Films: Poly/Oxide backseal

Epi Res: 28-42 ohm-cm

Epi Thickness: 14.25-15.75 µm


	Anfrage senden 15 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-0-0 Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Backside

Films: Oxide backseal

Epi Res: 2.5-3.5 ohm-cm

Epi Thickness: 5.6-6.4 µm


	Anfrage senden 150 200 mm CZ P Boron <100> 3 30 700 750 Prime SSP JEIDA Flat 100 0.16 3 20 Any Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 3-30 ohm-cm

Thickness: 695-755 µm

Lasermark: Optional


	Anfrage senden 31 200 mm CZ P Boron <100> 8 12 700 750 Prime DSP JEIDA Flat 50 0.065 Frontside HOLD FOR QUOTE 034457 po IN ROUTE

Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8.5-11.5 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front Scribe


	Anfrage senden 9 200 mm CZ P Boron <100> 8 12 700 750 Prime SSP JEIDA Flat Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Jeida Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8 - 12 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Buff Back


	Anfrage senden 1 200 mm CZ P Boron <100> 750 3500 700 750 SOI DSP Notch Oxide Backseal Notch Backside Diameter: 200mm 

Growth Method: CZ

Grade: SOI

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: 750 - 3,500 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal




	Anfrage Mehr Qty Available Diameter Material Type Dopant Orientation Res. (Min) Res. (Max) Thickness (Min) Thickness (Max) Grade Finish Flat Film Film Thickness Particle Count Particle Size TTV Bow Warp Lasermark Description




	Anfrage senden 829 2" CZ N Phosphorus <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 None Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 719 2" CZ N Phosphorus <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 Ohmcm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 1035 2" CZ N Phosphorus <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 473 2" CZ P Boron <100> 0.01 0.02 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 254 - 304 µm

TTV:  <10 µm

Particles: <10@.5 µm


	Anfrage senden 18 2" CZ P Boron <100> 1 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Anfrage senden 750 2" CZ P Boron <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 633 2" CZ P Boron <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Anfrage senden 576 2" CZ P Boron <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 37 3" CZ N Phosphorus <100> 1 5 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 200 3" CZ N Phosphorus <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 33 3" CZ N Phosphorus <100> 10 20 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 10 3" CZ N Phosphorus <100> 5 10 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 44 3" CZ P Boron <100> 1 10 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI Flats

Type/Dopant: p/Boron

Res: 1 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm 

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 255 3" CZ P Boron <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 12 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 415 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 398 100 mm CZ N Phosphorus <100> 1 10 500 550 Prime DSP 2 SEMI Flats 10 0.5 10 40 None Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@.5 µm


	Anfrage senden 464 100 mm CZ N Phosphorus <100> 1 5 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 213 100 mm CZ N Phosphorus <100> 10 20 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 445 100 mm CZ N Phosphorus <100> 5 10 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 159 100 mm CZ P Boron <100> 0.01 0.02 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 196 100 mm CZ P Boron <100> 0 0.005 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: <0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 25 150 mm CZ P Boron <100> 1 100 600 650 Test SSP JEIDA Flat 30 0.3 6" P<100> 1-100 OHM

600-650um SSP

Jeida Flat


	Anfrage senden 48 125 mm CZ N Antimony <100> 0.01 0.02 500 550 Prime SSP 1 SEMI Flat Oxide Backseal Frontside M13 Scribe Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Oxide backseal

Lasermark: Frontside M13


	Anfrage senden 95 125 mm CZ N Arsenic <111> Off 4° 0.004 500 550 Prime SSP 1 SEMI Flat None Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> Off 4°

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: <0.004 ohm-cm

Thickness: 500 - 550 µm


	Anfrage senden 96 125 mm CZ P Boron <111> 0.008 0.02 500 550 Prime SSP 1 SEMI Flat Poly Si Back Frontside Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 3°

Flats: 1 SEMI standard

Type/Dopant: p/Boron

Res: 0.008 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13


	Anfrage senden 38 150 mm CZ N Arsenic <100> 0.001 0.003 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 1-0-0

Type/Dopant: n/Arsenic

Res: <0.003 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Back scribe


	Anfrage senden 200 150 mm CZ N Arsenic <100> 0.002 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.002 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Anfrage senden 725 150 mm CZ N Arsenic <100> 0.004 0.007 483 533 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.004 - 0.007 ohm-cm

Thickness: 483 - 533 µm

Films: Oxide backseal

Lasermark: Front scribe   


	Anfrage senden 172 150 mm CZ N Antimony <100> 0.007 0.02 600 650 Prime 1 SEMI Flat Oxide Backseal None Diameter: 150mm 

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 600 - 650 µm

Films: Oxide backseal


	Anfrage senden 23 150 mm CZ N Antimony <100> 0.008 0.025 500 550 Prime 1 SEMI Flat Poly Si/Oxide Back None 6" N/Sb <100> .008-.025 ohm-cm

500-550um Epi Wafers

Poly/Ox Back

No Scribe

Semi Flat on the 1-1-0  


	Anfrage senden 75 150 mm CZ N Antimony <100> 0.01 0.025 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.025 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Front scribe


	Anfrage senden 25 150 mm CZ N Antimony <100> 0.01 0.02 350 400 Epi SSP 1 SEMI Flat Poly Si/Oxide Back Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 350 - 400 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 25 150 mm CZ N Arsenic <100> 0.0001 0.0044 500 550 Prime SSP JEIDA Flat Poly Si/Oxide Back 20 0.3 10 40 None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat

Type/Dopant: n/Arsenic

Res: 0.0001 - 0.0044 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 25 150 mm CZ N Antimony <111> 0.008 0.016 440 490 Epi JEIDA Flat Poly Si/Oxide Back 6" N/Sb <111> .008-.016 ohm

440-490um EPI Wafers

Jeida flat on the 1-1-0

Poly/Ox Back


	Anfrage senden 24 150 mm CZ N Antimony <111> 0.008 0.017 600 650 Prime SSP 1 SEMI Flat Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> 

Flats: 1 SEMI standard on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.017 ohm-cm

Thickness: 600 - 650 µm


	Anfrage senden 596 150 mm CZ P Boron <100> 0.0018 0.003 550 600 Prime Flat on the 1-0-0 Poly Si/Oxide Back Frontside M13 Scribe Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0018 - 0.003 ohm-cm

Thickness: 550 - 600 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13 Scribe


	Anfrage senden 125 150 mm CZ P Boron <100> 0.0001 0.005 650 700 Epi SSP 1 Flat Non-SEMI Poly Si/Oxide Back 6000 30 0.3 5 85 Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Front scribe

Films: Poly Si/Oxide backesal


	Anfrage senden 1275 150 mm CZ P Boron <100> 0.0001 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Anfrage senden 32 150 mm CZ P Boron <100> 5 10 495 555 Epi SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 495 - 555 µm


	Anfrage senden 24 150 mm CZ P Boron <100> 70 100 525 575 Prime SSP JEIDA Flat 40 0.16 3 3 17 None 6" P<100> 70-100 ohm-cm

525-575um SSP Wafers

No Scribe

Jeida flat on the 1-1-0


	Anfrage senden 25 150 mm CZ P Boron <100> Off 4° 70 100 525 575 Prime SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 4°

Flats: JEIDA flat on the 1-1-0

Type/Dopant: P/boron 

Res: 70 - 100 ohm-cm

Thickness: 525 - 575 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 749 150 mm CZ P Boron <100> 5 10 505 535 Epi JEIDA Flat Backside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

Lasermark: Back scribe


	Anfrage senden 50 150 mm CZ P Boron <111> Off 4° 0.008 0.015 600 650 Prime SSP 1 SEMI Flat Poly Si/Oxide Back 6000 12 0.3 10 50 50 Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 4°

Flats: 1 SEMI standard flat on the 0-1-1

Type/Dopant: p/Boron

Res: 0.008 - 0.015 ohm-cm

Thickness: 600 - 650 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Anfrage senden 65 200 mm CZ N Red Phosphorus <100> 0.001 0.002 700 750 Epi SSP Notch Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: 0.001 - 0.002 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal

Epi Res: 0.1 - 0.2 ohm-cm

Epi Thickness: 4 - 6 µm


	Anfrage senden 50 200 mm CZ N Antimony <100> 0.007 0.025 700 750 Prime 1 SEMI Flat Oxide Backseal Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.025 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal


	Anfrage senden 50 200 mm CZ N Antimony <100> 0.007 0.02 700 750 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Anfrage senden 25 200 mm CZ N Antimony <100> 0.008 0.03 700 750 Prime SSP Notch Poly Si Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Antimony

Res: .008-.03 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si backseal


	Anfrage senden 275 200 mm CZ N Red Phosphorus <100> 0.0012 0.0017 700 750 Prime Non-SEMI Notch Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: <0.0017 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal




	Anfrage senden 50 200 mm CZ N Red Phosphorus <100> 0.0017 0.0029 700 750 Prime Notch on the 0-1-0 Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Notch on the 0-1-0

Type/Dopant: n/Red Phosphorus

Res: 0.0017-.0029 ohm-cm

Thickness: 700-750 µm

Poly/Ox Back

No Scribe


	Anfrage senden 37 200 mm CZ N Arsenic <100> Off 2° 0.001 0.0045 700 750 Prime Notch Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 2°

Flats: Notch on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.001 - 0.0045 ohm-cm

Thickness: 700 - 750 µm

Films: Oxide backseal  


	Anfrage senden 3 200 mm CZ N Phosphorus <100> 1 10 700 750 Prime DSP Notch on the 1-1-0 10 0.12 1 10 10 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 17 200 mm CZ N Phosphorus <100> 20 40 700 750 Prime DSP Notch on the 0-0-1 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 0-0-1

Type/Dopant: n/Phosphorus

Res: 20 - 40 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 26 200 mm CZ N Phosphorus <100> 25 50 700 750 Prime DSP Notch on the 1-0-0 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Phosphorus

Res: 25 - 50 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 25 200 mm CZ N Phosphorus <100> 6 12 650 700 Epi Notch Poly Si/Oxide Back Backside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 6 - 12 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Anfrage senden 50 200 mm CZ P Boron <100> 0.005 0.01 700 750 Epi DSP 1 SEMI Flat Oxide Backseal 3500 2 0 34 Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: p/Boron

Res: 0.005 - 0.01 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Anfrage senden 25 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-1-0 Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Frontside

Films: Poly/Oxide backseal

Epi Res: 28-42 ohm-cm

Epi Thickness: 14.25-15.75 µm


	Anfrage senden 15 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-0-0 Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Backside

Films: Oxide backseal

Epi Res: 2.5-3.5 ohm-cm

Epi Thickness: 5.6-6.4 µm


	Anfrage senden 150 200 mm CZ P Boron <100> 3 30 700 750 Prime SSP JEIDA Flat 100 0.16 3 20 Any Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 3-30 ohm-cm

Thickness: 695-755 µm

Lasermark: Optional


	Anfrage senden 31 200 mm CZ P Boron <100> 8 12 700 750 Prime DSP JEIDA Flat 50 0.065 Frontside HOLD FOR QUOTE 034457 po IN ROUTE

Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8.5-11.5 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front Scribe


	Anfrage senden 9 200 mm CZ P Boron <100> 8 12 700 750 Prime SSP JEIDA Flat Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Jeida Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8 - 12 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Buff Back


	Anfrage senden 1 200 mm CZ P Boron <100> 750 3500 700 750 SOI DSP Notch Oxide Backseal Notch Backside Diameter: 200mm 

Growth Method: CZ

Grade: SOI

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: 750 - 3,500 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal




	Anfrage Mehr Qty Available Diameter Material Type Dopant Orientation Res. (Min) Res. (Max) Thickness (Min) Thickness (Max) Grade Finish Flat Film Film Thickness Particle Count Particle Size TTV Bow Warp Lasermark Description




	Anfrage senden 829 2" CZ N Phosphorus <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 None Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 719 2" CZ N Phosphorus <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 Ohmcm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 1035 2" CZ N Phosphorus <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 473 2" CZ P Boron <100> 0.01 0.02 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 254 - 304 µm

TTV:  <10 µm

Particles: <10@.5 µm


	Anfrage senden 18 2" CZ P Boron <100> 1 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Anfrage senden 750 2" CZ P Boron <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 633 2" CZ P Boron <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Anfrage senden 576 2" CZ P Boron <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Anfrage senden 37 3" CZ N Phosphorus <100> 1 5 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 200 3" CZ N Phosphorus <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 33 3" CZ N Phosphorus <100> 10 20 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 10 3" CZ N Phosphorus <100> 5 10 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Anfrage senden 44 3" CZ P Boron <100> 1 10 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI Flats

Type/Dopant: p/Boron

Res: 1 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm 

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 255 3" CZ P Boron <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Anfrage senden 12 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 415 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 398 100 mm CZ N Phosphorus <100> 1 10 500 550 Prime DSP 2 SEMI Flats 10 0.5 10 40 None Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@.5 µm


	Anfrage senden 464 100 mm CZ N Phosphorus <100> 1 5 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 213 100 mm CZ N Phosphorus <100> 10 20 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 445 100 mm CZ N Phosphorus <100> 5 10 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 159 100 mm CZ P Boron <100> 0.01 0.02 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 196 100 mm CZ P Boron <100> 0 0.005 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: <0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Anfrage senden 25 150 mm CZ P Boron <100> 1 100 600 650 Test SSP JEIDA Flat 30 0.3 6" P<100> 1-100 OHM

600-650um SSP

Jeida Flat


	Anfrage senden 48 125 mm CZ N Antimony <100> 0.01 0.02 500 550 Prime SSP 1 SEMI Flat Oxide Backseal Frontside M13 Scribe Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Oxide backseal

Lasermark: Frontside M13


	Anfrage senden 95 125 mm CZ N Arsenic <111> Off 4° 0.004 500 550 Prime SSP 1 SEMI Flat None Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> Off 4°

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: <0.004 ohm-cm

Thickness: 500 - 550 µm


	Anfrage senden 96 125 mm CZ P Boron <111> 0.008 0.02 500 550 Prime SSP 1 SEMI Flat Poly Si Back Frontside Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 3°

Flats: 1 SEMI standard

Type/Dopant: p/Boron

Res: 0.008 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13


	Anfrage senden 38 150 mm CZ N Arsenic <100> 0.001 0.003 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 1-0-0

Type/Dopant: n/Arsenic

Res: <0.003 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Back scribe


	Anfrage senden 200 150 mm CZ N Arsenic <100> 0.002 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.002 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Anfrage senden 725 150 mm CZ N Arsenic <100> 0.004 0.007 483 533 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.004 - 0.007 ohm-cm

Thickness: 483 - 533 µm

Films: Oxide backseal

Lasermark: Front scribe   


	Anfrage senden 172 150 mm CZ N Antimony <100> 0.007 0.02 600 650 Prime 1 SEMI Flat Oxide Backseal None Diameter: 150mm 

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 600 - 650 µm

Films: Oxide backseal


	Anfrage senden 23 150 mm CZ N Antimony <100> 0.008 0.025 500 550 Prime 1 SEMI Flat Poly Si/Oxide Back None 6" N/Sb <100> .008-.025 ohm-cm

500-550um Epi Wafers

Poly/Ox Back

No Scribe

Semi Flat on the 1-1-0  


	Anfrage senden 75 150 mm CZ N Antimony <100> 0.01 0.025 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.025 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Front scribe


	Anfrage senden 25 150 mm CZ N Antimony <100> 0.01 0.02 350 400 Epi SSP 1 SEMI Flat Poly Si/Oxide Back Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 350 - 400 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 25 150 mm CZ N Arsenic <100> 0.0001 0.0044 500 550 Prime SSP JEIDA Flat Poly Si/Oxide Back 20 0.3 10 40 None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat

Type/Dopant: n/Arsenic

Res: 0.0001 - 0.0044 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 25 150 mm CZ N Antimony <111> 0.008 0.016 440 490 Epi JEIDA Flat Poly Si/Oxide Back 6" N/Sb <111> .008-.016 ohm

440-490um EPI Wafers

Jeida flat on the 1-1-0

Poly/Ox Back


	Anfrage senden 24 150 mm CZ N Antimony <111> 0.008 0.017 600 650 Prime SSP 1 SEMI Flat Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> 

Flats: 1 SEMI standard on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.017 ohm-cm

Thickness: 600 - 650 µm


	Anfrage senden 596 150 mm CZ P Boron <100> 0.0018 0.003 550 600 Prime Flat on the 1-0-0 Poly Si/Oxide Back Frontside M13 Scribe Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0018 - 0.003 ohm-cm

Thickness: 550 - 600 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13 Scribe


	Anfrage senden 125 150 mm CZ P Boron <100> 0.0001 0.005 650 700 Epi SSP 1 Flat Non-SEMI Poly Si/Oxide Back 6000 30 0.3 5 85 Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Front scribe

Films: Poly Si/Oxide backesal


	Anfrage senden 1275 150 mm CZ P Boron <100> 0.0001 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Anfrage senden 32 150 mm CZ P Boron <100> 5 10 495 555 Epi SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 495 - 555 µm


	Anfrage senden 24 150 mm CZ P Boron <100> 70 100 525 575 Prime SSP JEIDA Flat 40 0.16 3 3 17 None 6" P<100> 70-100 ohm-cm

525-575um SSP Wafers

No Scribe

Jeida flat on the 1-1-0


	Anfrage senden 25 150 mm CZ P Boron <100> Off 4° 70 100 525 575 Prime SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 4°

Flats: JEIDA flat on the 1-1-0

Type/Dopant: P/boron 

Res: 70 - 100 ohm-cm

Thickness: 525 - 575 µm

Films: Poly Si/Oxide backseal


	Anfrage senden 749 150 mm CZ P Boron <100> 5 10 505 535 Epi JEIDA Flat Backside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

Lasermark: Back scribe


	Anfrage senden 50 150 mm CZ P Boron <111> Off 4° 0.008 0.015 600 650 Prime SSP 1 SEMI Flat Poly Si/Oxide Back 6000 12 0.3 10 50 50 Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 4°

Flats: 1 SEMI standard flat on the 0-1-1

Type/Dopant: p/Boron

Res: 0.008 - 0.015 ohm-cm

Thickness: 600 - 650 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Anfrage senden 65 200 mm CZ N Red Phosphorus <100> 0.001 0.002 700 750 Epi SSP Notch Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: 0.001 - 0.002 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal

Epi Res: 0.1 - 0.2 ohm-cm

Epi Thickness: 4 - 6 µm


	Anfrage senden 50 200 mm CZ N Antimony <100> 0.007 0.025 700 750 Prime 1 SEMI Flat Oxide Backseal Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.025 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal


	Anfrage senden 50 200 mm CZ N Antimony <100> 0.007 0.02 700 750 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Anfrage senden 25 200 mm CZ N Antimony <100> 0.008 0.03 700 750 Prime SSP Notch Poly Si Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Antimony

Res: .008-.03 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si backseal


	Anfrage senden 275 200 mm CZ N Red Phosphorus <100> 0.0012 0.0017 700 750 Prime Non-SEMI Notch Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: <0.0017 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal




	Anfrage senden 50 200 mm CZ N Red Phosphorus <100> 0.0017 0.0029 700 750 Prime Notch on the 0-1-0 Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Notch on the 0-1-0

Type/Dopant: n/Red Phosphorus

Res: 0.0017-.0029 ohm-cm

Thickness: 700-750 µm

Poly/Ox Back

No Scribe


	Anfrage senden 37 200 mm CZ N Arsenic <100> Off 2° 0.001 0.0045 700 750 Prime Notch Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 2°

Flats: Notch on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.001 - 0.0045 ohm-cm

Thickness: 700 - 750 µm

Films: Oxide backseal  


	Anfrage senden 3 200 mm CZ N Phosphorus <100> 1 10 700 750 Prime DSP Notch on the 1-1-0 10 0.12 1 10 10 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 17 200 mm CZ N Phosphorus <100> 20 40 700 750 Prime DSP Notch on the 0-0-1 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 0-0-1

Type/Dopant: n/Phosphorus

Res: 20 - 40 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 26 200 mm CZ N Phosphorus <100> 25 50 700 750 Prime DSP Notch on the 1-0-0 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Phosphorus

Res: 25 - 50 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Anfrage senden 25 200 mm CZ N Phosphorus <100> 6 12 650 700 Epi Notch Poly Si/Oxide Back Backside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 6 - 12 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Anfrage senden 50 200 mm CZ P Boron <100> 0.005 0.01 700 750 Epi DSP 1 SEMI Flat Oxide Backseal 3500 2 0 34 Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: p/Boron

Res: 0.005 - 0.01 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Anfrage senden 25 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-1-0 Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Frontside

Films: Poly/Oxide backseal

Epi Res: 28-42 ohm-cm

Epi Thickness: 14.25-15.75 µm


	Anfrage senden 15 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-0-0 Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Backside

Films: Oxide backseal

Epi Res: 2.5-3.5 ohm-cm

Epi Thickness: 5.6-6.4 µm


	Anfrage senden 150 200 mm CZ P Boron <100> 3 30 700 750 Prime SSP JEIDA Flat 100 0.16 3 20 Any Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 3-30 ohm-cm

Thickness: 695-755 µm

Lasermark: Optional


	Anfrage senden 31 200 mm CZ P Boron <100> 8 12 700 750 Prime DSP JEIDA Flat 50 0.065 Frontside HOLD FOR QUOTE 034457 po IN ROUTE

Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8.5-11.5 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front Scribe


	Anfrage senden 9 200 mm CZ P Boron <100> 8 12 700 750 Prime SSP JEIDA Flat Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Jeida Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8 - 12 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Buff Back


	Anfrage senden 1 200 mm CZ P Boron <100> 750 3500 700 750 SOI DSP Notch Oxide Backseal Notch Backside Diameter: 200mm 

Growth Method: CZ

Grade: SOI

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: 750 - 3,500 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal