Our Silicon Wafer Inventory

to the inventory

We, Active Business Company GmbH and our long-standing business partners, have established a strategic sales partnership. Due to this reason, all wafers on stock at our partners can be reviewed and ordered online. Order your Silicon Wafer this way and we will deliver within a week.

Our inventory list contains a large choice of different silicon wafer specifications in well-known quality. Thanks to our convenient online search and filter function, you can quickly get to the silicon wafers that meet your requirements.

Extensive search functions help you to find adequate silicon wafers. The filter options include all important specifications such as diameter, type and doping, the resistivity, the thickness and the surface quality of the silicon wafers. After each selection, the inventory list is updated automatically. One click on “more” accesses you to the complete available specification.

To change a selected specification, just click on the selected filter below the selected specification.

Beyond that, it is possible to sort the silicon wafer inventory list. A simple click in the corresponding field of the criterion (for example, Qty Available, Diameter, Material, etc.) in the first row of the table performs the filter function.

An additional search field assists you in further narrowing the silicon wafer inventory list. After the successful search of your silicon wafers, you can send us your request directly via the button “send request” via email. If you want to add a coating (silicon oxide, silicon nitride, copper, titanium, gold or others), dicing or thinning, you can easily complete this information within the request.

The minimum order quantity (MOQ) is one wafer cassette and therefore 25 wafers. Exceptions to this are so-called partial cassettes, i.e. silicon wafer cassettes, which are only partially filled. In these cases, the minimum order quantity is the quantity in the respective cassettes.

After receiving your request, it will be processed immediately. We will send you the appropriate quotation shortly.

In case you cannot find suitable wafers there, please be so kind to send us your request using our contact form.

Reset filters
RequestMoreQty AvailableDiameterMaterialTypeDopantOrientationRes. (Min)Res. (Max)Thickness (Min)Thickness (Max)GradeFinishFlatFilmFilm ThicknessParticle CountParticle SizeTTVBowWarpLasermarkDescription
Send Request8292"CZNPhosphorus<100>15254304PrimeSSP2 SEMI Flats100.510NoneDiameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request7192"CZNPhosphorus<100>1020254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 Ohmcm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request10352"CZNPhosphorus<100>510254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request4732"CZPBoron<100>0.010.02254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 0.01 - 0.02 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request182"CZPBoron<100>120254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 1 - 20 ohm-cm
Thickness: 254 - 304 µm
TTV <10 µm
Particles: <10@.5 µm
Send Request7502"CZPBoron<100>15254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 1 - 5 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request6332"CZPBoron<100>1020254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 10 - 20 ohm-cm
Thickness: 254 - 304 µm
TTV <10 µm
Particles: <10@.5 µm
Send Request5762"CZPBoron<100>510254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request373"CZNPhosphorus<100>15356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request2003"CZNPhosphorus<100>1020356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request333"CZNPhosphorus<100>1020356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request103"CZNPhosphorus<100>510356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request443"CZPBoron<100>110356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI Flats
Type/Dopant: p/Boron
Res: 1 - 10 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request2553"CZPBoron<100>1020356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request12100 mmCZNArsenic<100>0.0010.005500550PrimeSSP2 SEMI Flats0.3104040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Arsenic
Res: 0.001 - 0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request415100 mmCZNArsenic<100>0.0010.005500550PrimeSSP2 SEMI Flats0.3104040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Arsenic
Res: 0.001 - 0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request398100 mmCZNPhosphorus<100>110500550PrimeDSP2 SEMI Flats100.51040NoneDiameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 10 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@.5 µm
Send Request464100 mmCZNPhosphorus<100>15500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request213100 mmCZNPhosphorus<100>1020500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request445100 mmCZNPhosphorus<100>510500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request159100 mmCZPBoron<100>0.010.02500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 0.01 - 0.02 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request196100 mmCZPBoron<100>00.005500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: <0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request25150 mmCZPBoron<100>1100600650TestSSPJEIDA Flat300.36" P<100> 1-100 OHM
600-650um SSP
Jeida Flat
Send Request48125 mmCZNAntimony<100>0.010.02500550PrimeSSP1 SEMI FlatOxide BacksealFrontside M13 ScribeDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI standard
Type/Dopant: n/Antimony
Res: 0.01 - 0.02 ohm-cm
Thickness: 500 - 550 µm
Films: Oxide backseal
Lasermark: Frontside M13
Send Request95125 mmCZNArsenic<111> Off 4°0.004500550PrimeSSP1 SEMI FlatNoneDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP - Soft BSD
Orientation: <111> Off 4°
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: <0.004 ohm-cm
Thickness: 500 - 550 µm
Send Request96125 mmCZPBoron<111>0.0080.02500550PrimeSSP1 SEMI FlatPoly Si BackFrontsideDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <111> Off 3°
Flats: 1 SEMI standard
Type/Dopant: p/Boron
Res: 0.008 - 0.02 ohm-cm
Thickness: 500 - 550 µm
Films: Poly Si/Oxide backseal
Lasermark: Frontside M13
Send Request38150 mmCZNArsenic<100>0.0010.003600650PrimeSSPJEIDA FlatPoly Si/Oxide BackBacksideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-0-0
Type/Dopant: n/Arsenic
Res: <0.003 ohm-cm
Thickness: 600 - 650 µm
Films: Poly Si/Oxide backseal
Lasermark: Back scribe
Send Request200150 mmCZNArsenic<100>0.0020.005350400PrimeSSPJEIDA FlatOxide BacksealNoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.002 - 0.005 ohm-cm
Thickness: 350 - 400 µm
Films: Oxide backseal
Send Request725150 mmCZNArsenic<100>0.0040.007483533Prime1 SEMI FlatOxide BacksealFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.004 - 0.007 ohm-cm
Thickness: 483 - 533 µm
Films: Oxide backseal
Lasermark: Front scribe
Send Request172150 mmCZNAntimony<100>0.0070.02600650Prime1 SEMI FlatOxide BacksealNoneDiameter: 150mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.02 ohm-cm
Thickness: 600 - 650 µm
Films: Oxide backseal
Send Request23150 mmCZNAntimony<100>0.0080.025500550Prime1 SEMI FlatPoly Si/Oxide BackNone6" N/Sb <100> .008-.025 ohm-cm
500-550um Epi Wafers
Poly/Ox Back
No Scribe
Semi Flat on the 1-1-0
Send Request75150 mmCZNAntimony<100>0.010.025600650PrimeSSPJEIDA FlatPoly Si/Oxide BackFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 0-1-1
Type/Dopant: n/Antimony
Res: 0.008 - 0.025 ohm-cm
Thickness: 600 - 650 µm
Films: Poly Si/Oxide backseal
Lasermark: Front scribe
Send Request25150 mmCZNAntimony<100>0.010.02350400EpiSSP1 SEMI FlatPoly Si/Oxide BackDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: 1 SEMI standard
Type/Dopant: n/Antimony
Res: 0.01 - 0.02 ohm-cm
Thickness: 350 - 400 µm
Films: Poly Si/Oxide backseal
Send Request25150 mmCZNArsenic<100>0.00010.0044500550PrimeSSPJEIDA FlatPoly Si/Oxide Back200.31040NoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat
Type/Dopant: n/Arsenic
Res: 0.0001 - 0.0044 ohm-cm
Thickness: 500 - 550 µm
Films: Poly Si/Oxide backseal
Send Request25150 mmCZNAntimony<111>0.0080.016440490EpiJEIDA FlatPoly Si/Oxide Back6" N/Sb <111> .008-.016 ohm
440-490um EPI Wafers
Jeida flat on the 1-1-0
Poly/Ox Back
Send Request24150 mmCZNAntimony<111>0.0080.017600650PrimeSSP1 SEMI FlatDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP - Soft BSD
Orientation: <111>
Flats: 1 SEMI standard on the 0-1-1
Type/Dopant: n/Antimony
Res: 0.008 - 0.017 ohm-cm
Thickness: 600 - 650 µm
Send Request596150 mmCZPBoron<100>0.00180.003550600PrimeFlat on the 1-0-0Poly Si/Oxide BackFrontside M13 ScribeDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-0-0
Type/Dopant: p/Boron
Res: 0.0018 - 0.003 ohm-cm
Thickness: 550 - 600 µm
Films: Poly Si/Oxide backseal
Lasermark: Frontside M13 Scribe
Send Request125150 mmCZPBoron<100>0.00010.005650700EpiSSP1 Flat Non-SEMIPoly Si/Oxide Back6000300.3585FrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-0-0
Type/Dopant: p/Boron
Res: 0.0001 - 0.005 ohm-cm
Thickness: 650 - 700 µm
Lasermark: Front scribe
Films: Poly Si/Oxide backesal
Send Request1275150 mmCZPBoron<100>0.00010.005350400PrimeSSPJEIDA FlatOxide BacksealFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat
Type/Dopant: p/Boron
Res: 0.0001 - 0.005 ohm-cm
Thickness: 350 - 400 µm
Films: Oxide backseal
Send Request32150 mmCZPBoron<100>510495555EpiSSPJEIDA FlatPoly Si/Oxide BackNoneDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-1-0
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 495 - 555 µm
Send Request24150 mmCZPBoron<100>70100525575PrimeSSPJEIDA Flat400.163317None6" P<100> 70-100 ohm-cm
525-575um SSP Wafers
No Scribe
Jeida flat on the 1-1-0
Send Request25150 mmCZPBoron<100> Off 4°70100525575PrimeSSPJEIDA FlatPoly Si/Oxide BackNoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100> Off 4°
Flats: JEIDA flat on the 1-1-0
Type/Dopant: P/boron
Res: 70 - 100 ohm-cm
Thickness: 525 - 575 µm
Films: Poly Si/Oxide backseal
Send Request749150 mmCZPBoron<100>510505535EpiJEIDA FlatBacksideDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: DSP
Orientation: <100>
Flats: 1 JEIDA flat on the 1-1-0
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 500 - 550 µm
Lasermark: Back scribe
Send Request50150 mmCZPBoron<111> Off 4°0.0080.015600650PrimeSSP1 SEMI FlatPoly Si/Oxide Back6000120.3105050BacksideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <111> Off 4°
Flats: 1 SEMI standard flat on the 0-1-1
Type/Dopant: p/Boron
Res: 0.008 - 0.015 ohm-cm
Thickness: 600 - 650 µm
Lasermark: Back scribe
Films: Poly Si/Oxide backseal
Send Request65200 mmCZNRed Phosphorus<100>0.0010.002700750EpiSSPNotchPoly Si/Oxide BackDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Red Phosphorus
Res: 0.001 - 0.002 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si/Oxide backseal
Epi Res: 0.1 - 0.2 ohm-cm
Epi Thickness: 4 - 6 µm
Send Request50200 mmCZNAntimony<100>0.0070.025700750Prime1 SEMI FlatOxide BacksealBacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.025 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Films: Oxide backseal
Send Request50200 mmCZNAntimony<100>0.0070.02700750Prime1 SEMI FlatOxide BacksealFrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Films: Oxide backseal
Send Request25200 mmCZNAntimony<100>0.0080.03700750PrimeSSPNotchPoly Si BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Antimony
Res: .008-.03 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si backseal
Send Request275200 mmCZNRed Phosphorus<100>0.00120.0017700750PrimeNon-SEMI NotchPoly Si/Oxide BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Red Phosphorus
Res: <0.0017 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si/Oxide backseal
Send Request50200 mmCZNRed Phosphorus<100>0.00170.0029700750PrimeNotch on the 0-1-0Poly Si/Oxide BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 0-1-0
Type/Dopant: n/Red Phosphorus
Res: 0.0017-.0029 ohm-cm
Thickness: 700-750 µm
Poly/Ox Back
No Scribe
Send Request37200 mmCZNArsenic<100> Off 2°0.0010.0045700750PrimeNotchOxide BacksealDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100> Off 2°
Flats: Notch on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.001 - 0.0045 ohm-cm
Thickness: 700 - 750 µm
Films: Oxide backseal
Send Request3200 mmCZNPhosphorus<100>110700750PrimeDSPNotch on the 1-1-0100.1211010BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Phosphorus
Res: 1 - 10 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request17200 mmCZNPhosphorus<100>2040700750PrimeDSPNotch on the 0-0-1200.161520BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 0-0-1
Type/Dopant: n/Phosphorus
Res: 20 - 40 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request26200 mmCZNPhosphorus<100>2550700750PrimeDSPNotch on the 1-0-0200.161520BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Phosphorus
Res: 25 - 50 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request25200 mmCZNPhosphorus<100>612650700EpiNotchPoly Si/Oxide BackBacksideDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Phosphorus
Res: 6 - 12 ohm-cm
Thickness: 650 - 700 µm
Lasermark: Back scribe
Films: Poly Si/Oxide backseal
Send Request50200 mmCZPBoron<100>0.0050.01700750EpiDSP1 SEMI FlatOxide Backseal35002034FrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: DSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: p/Boron
Res: 0.005 - 0.01 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Films: Oxide backseal
Send Request25200 mmCZPBoron<100>0.010.02700750EpiSSPNotch on the 1-1-0Poly Si/Oxide BackDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: p/Boron
Res: .01-.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Frontside
Films: Poly/Oxide backseal
Epi Res: 28-42 ohm-cm
Epi Thickness: 14.25-15.75 µm
Send Request15200 mmCZPBoron<100>0.010.02700750EpiSSPNotch on the 1-0-0Oxide BacksealDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: p/Boron
Res: .01-.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Backside
Films: Oxide backseal
Epi Res: 2.5-3.5 ohm-cm
Epi Thickness: 5.6-6.4 µm
Send Request150200 mmCZPBoron<100>330700750PrimeSSPJEIDA Flat1000.16320AnyDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 3-30 ohm-cm
Thickness: 695-755 µm
Lasermark: Optional
Send Request31200 mmCZPBoron<100>812700750PrimeDSPJEIDA Flat500.065FrontsideHOLD FOR QUOTE 034457 po IN ROUTE
Diameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 8.5-11.5 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front Scribe
Send Request9200 mmCZPBoron<100>812700750PrimeSSPJEIDA FlatFrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Jeida Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 8 - 12 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Buff Back
Send Request1200 mmCZPBoron<100>7503500700750SOIDSPNotchOxide BacksealNotchBacksideDiameter: 200mm
Growth Method: CZ
Grade: SOI
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: p/Boron
Res: 750 - 3,500 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Films: Oxide backseal
RequestMoreQty AvailableDiameterMaterialTypeDopantOrientationRes. (Min)Res. (Max)Thickness (Min)Thickness (Max)GradeFinishFlatFilmFilm ThicknessParticle CountParticle SizeTTVBowWarpLasermarkDescription
Send Request8292"CZNPhosphorus<100>15254304PrimeSSP2 SEMI Flats100.510NoneDiameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request7192"CZNPhosphorus<100>1020254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 Ohmcm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request10352"CZNPhosphorus<100>510254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request4732"CZPBoron<100>0.010.02254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 0.01 - 0.02 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request182"CZPBoron<100>120254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 1 - 20 ohm-cm
Thickness: 254 - 304 µm
TTV <10 µm
Particles: <10@.5 µm
Send Request7502"CZPBoron<100>15254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 1 - 5 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request6332"CZPBoron<100>1020254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 10 - 20 ohm-cm
Thickness: 254 - 304 µm
TTV <10 µm
Particles: <10@.5 µm
Send Request5762"CZPBoron<100>510254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request373"CZNPhosphorus<100>15356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request2003"CZNPhosphorus<100>1020356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request333"CZNPhosphorus<100>1020356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request103"CZNPhosphorus<100>510356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request443"CZPBoron<100>110356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI Flats
Type/Dopant: p/Boron
Res: 1 - 10 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request2553"CZPBoron<100>1020356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request12100 mmCZNArsenic<100>0.0010.005500550PrimeSSP2 SEMI Flats0.3104040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Arsenic
Res: 0.001 - 0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request415100 mmCZNArsenic<100>0.0010.005500550PrimeSSP2 SEMI Flats0.3104040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Arsenic
Res: 0.001 - 0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request398100 mmCZNPhosphorus<100>110500550PrimeDSP2 SEMI Flats100.51040NoneDiameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 10 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@.5 µm
Send Request464100 mmCZNPhosphorus<100>15500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request213100 mmCZNPhosphorus<100>1020500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request445100 mmCZNPhosphorus<100>510500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request159100 mmCZPBoron<100>0.010.02500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 0.01 - 0.02 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request196100 mmCZPBoron<100>00.005500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: <0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request25150 mmCZPBoron<100>1100600650TestSSPJEIDA Flat300.36" P<100> 1-100 OHM
600-650um SSP
Jeida Flat
Send Request48125 mmCZNAntimony<100>0.010.02500550PrimeSSP1 SEMI FlatOxide BacksealFrontside M13 ScribeDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI standard
Type/Dopant: n/Antimony
Res: 0.01 - 0.02 ohm-cm
Thickness: 500 - 550 µm
Films: Oxide backseal
Lasermark: Frontside M13
Send Request95125 mmCZNArsenic<111> Off 4°0.004500550PrimeSSP1 SEMI FlatNoneDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP - Soft BSD
Orientation: <111> Off 4°
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: <0.004 ohm-cm
Thickness: 500 - 550 µm
Send Request96125 mmCZPBoron<111>0.0080.02500550PrimeSSP1 SEMI FlatPoly Si BackFrontsideDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <111> Off 3°
Flats: 1 SEMI standard
Type/Dopant: p/Boron
Res: 0.008 - 0.02 ohm-cm
Thickness: 500 - 550 µm
Films: Poly Si/Oxide backseal
Lasermark: Frontside M13
Send Request38150 mmCZNArsenic<100>0.0010.003600650PrimeSSPJEIDA FlatPoly Si/Oxide BackBacksideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-0-0
Type/Dopant: n/Arsenic
Res: <0.003 ohm-cm
Thickness: 600 - 650 µm
Films: Poly Si/Oxide backseal
Lasermark: Back scribe
Send Request200150 mmCZNArsenic<100>0.0020.005350400PrimeSSPJEIDA FlatOxide BacksealNoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.002 - 0.005 ohm-cm
Thickness: 350 - 400 µm
Films: Oxide backseal
Send Request725150 mmCZNArsenic<100>0.0040.007483533Prime1 SEMI FlatOxide BacksealFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.004 - 0.007 ohm-cm
Thickness: 483 - 533 µm
Films: Oxide backseal
Lasermark: Front scribe
Send Request172150 mmCZNAntimony<100>0.0070.02600650Prime1 SEMI FlatOxide BacksealNoneDiameter: 150mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.02 ohm-cm
Thickness: 600 - 650 µm
Films: Oxide backseal
Send Request23150 mmCZNAntimony<100>0.0080.025500550Prime1 SEMI FlatPoly Si/Oxide BackNone6" N/Sb <100> .008-.025 ohm-cm
500-550um Epi Wafers
Poly/Ox Back
No Scribe
Semi Flat on the 1-1-0
Send Request75150 mmCZNAntimony<100>0.010.025600650PrimeSSPJEIDA FlatPoly Si/Oxide BackFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 0-1-1
Type/Dopant: n/Antimony
Res: 0.008 - 0.025 ohm-cm
Thickness: 600 - 650 µm
Films: Poly Si/Oxide backseal
Lasermark: Front scribe
Send Request25150 mmCZNAntimony<100>0.010.02350400EpiSSP1 SEMI FlatPoly Si/Oxide BackDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: 1 SEMI standard
Type/Dopant: n/Antimony
Res: 0.01 - 0.02 ohm-cm
Thickness: 350 - 400 µm
Films: Poly Si/Oxide backseal
Send Request25150 mmCZNArsenic<100>0.00010.0044500550PrimeSSPJEIDA FlatPoly Si/Oxide Back200.31040NoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat
Type/Dopant: n/Arsenic
Res: 0.0001 - 0.0044 ohm-cm
Thickness: 500 - 550 µm
Films: Poly Si/Oxide backseal
Send Request25150 mmCZNAntimony<111>0.0080.016440490EpiJEIDA FlatPoly Si/Oxide Back6" N/Sb <111> .008-.016 ohm
440-490um EPI Wafers
Jeida flat on the 1-1-0
Poly/Ox Back
Send Request24150 mmCZNAntimony<111>0.0080.017600650PrimeSSP1 SEMI FlatDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP - Soft BSD
Orientation: <111>
Flats: 1 SEMI standard on the 0-1-1
Type/Dopant: n/Antimony
Res: 0.008 - 0.017 ohm-cm
Thickness: 600 - 650 µm
Send Request596150 mmCZPBoron<100>0.00180.003550600PrimeFlat on the 1-0-0Poly Si/Oxide BackFrontside M13 ScribeDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-0-0
Type/Dopant: p/Boron
Res: 0.0018 - 0.003 ohm-cm
Thickness: 550 - 600 µm
Films: Poly Si/Oxide backseal
Lasermark: Frontside M13 Scribe
Send Request125150 mmCZPBoron<100>0.00010.005650700EpiSSP1 Flat Non-SEMIPoly Si/Oxide Back6000300.3585FrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-0-0
Type/Dopant: p/Boron
Res: 0.0001 - 0.005 ohm-cm
Thickness: 650 - 700 µm
Lasermark: Front scribe
Films: Poly Si/Oxide backesal
Send Request1275150 mmCZPBoron<100>0.00010.005350400PrimeSSPJEIDA FlatOxide BacksealFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat
Type/Dopant: p/Boron
Res: 0.0001 - 0.005 ohm-cm
Thickness: 350 - 400 µm
Films: Oxide backseal
Send Request32150 mmCZPBoron<100>510495555EpiSSPJEIDA FlatPoly Si/Oxide BackNoneDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-1-0
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 495 - 555 µm
Send Request24150 mmCZPBoron<100>70100525575PrimeSSPJEIDA Flat400.163317None6" P<100> 70-100 ohm-cm
525-575um SSP Wafers
No Scribe
Jeida flat on the 1-1-0
Send Request25150 mmCZPBoron<100> Off 4°70100525575PrimeSSPJEIDA FlatPoly Si/Oxide BackNoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100> Off 4°
Flats: JEIDA flat on the 1-1-0
Type/Dopant: P/boron
Res: 70 - 100 ohm-cm
Thickness: 525 - 575 µm
Films: Poly Si/Oxide backseal
Send Request749150 mmCZPBoron<100>510505535EpiJEIDA FlatBacksideDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: DSP
Orientation: <100>
Flats: 1 JEIDA flat on the 1-1-0
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 500 - 550 µm
Lasermark: Back scribe
Send Request50150 mmCZPBoron<111> Off 4°0.0080.015600650PrimeSSP1 SEMI FlatPoly Si/Oxide Back6000120.3105050BacksideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <111> Off 4°
Flats: 1 SEMI standard flat on the 0-1-1
Type/Dopant: p/Boron
Res: 0.008 - 0.015 ohm-cm
Thickness: 600 - 650 µm
Lasermark: Back scribe
Films: Poly Si/Oxide backseal
Send Request65200 mmCZNRed Phosphorus<100>0.0010.002700750EpiSSPNotchPoly Si/Oxide BackDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Red Phosphorus
Res: 0.001 - 0.002 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si/Oxide backseal
Epi Res: 0.1 - 0.2 ohm-cm
Epi Thickness: 4 - 6 µm
Send Request50200 mmCZNAntimony<100>0.0070.025700750Prime1 SEMI FlatOxide BacksealBacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.025 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Films: Oxide backseal
Send Request50200 mmCZNAntimony<100>0.0070.02700750Prime1 SEMI FlatOxide BacksealFrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Films: Oxide backseal
Send Request25200 mmCZNAntimony<100>0.0080.03700750PrimeSSPNotchPoly Si BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Antimony
Res: .008-.03 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si backseal
Send Request275200 mmCZNRed Phosphorus<100>0.00120.0017700750PrimeNon-SEMI NotchPoly Si/Oxide BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Red Phosphorus
Res: <0.0017 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si/Oxide backseal
Send Request50200 mmCZNRed Phosphorus<100>0.00170.0029700750PrimeNotch on the 0-1-0Poly Si/Oxide BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 0-1-0
Type/Dopant: n/Red Phosphorus
Res: 0.0017-.0029 ohm-cm
Thickness: 700-750 µm
Poly/Ox Back
No Scribe
Send Request37200 mmCZNArsenic<100> Off 2°0.0010.0045700750PrimeNotchOxide BacksealDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100> Off 2°
Flats: Notch on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.001 - 0.0045 ohm-cm
Thickness: 700 - 750 µm
Films: Oxide backseal
Send Request3200 mmCZNPhosphorus<100>110700750PrimeDSPNotch on the 1-1-0100.1211010BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Phosphorus
Res: 1 - 10 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request17200 mmCZNPhosphorus<100>2040700750PrimeDSPNotch on the 0-0-1200.161520BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 0-0-1
Type/Dopant: n/Phosphorus
Res: 20 - 40 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request26200 mmCZNPhosphorus<100>2550700750PrimeDSPNotch on the 1-0-0200.161520BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Phosphorus
Res: 25 - 50 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request25200 mmCZNPhosphorus<100>612650700EpiNotchPoly Si/Oxide BackBacksideDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Phosphorus
Res: 6 - 12 ohm-cm
Thickness: 650 - 700 µm
Lasermark: Back scribe
Films: Poly Si/Oxide backseal
Send Request50200 mmCZPBoron<100>0.0050.01700750EpiDSP1 SEMI FlatOxide Backseal35002034FrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: DSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: p/Boron
Res: 0.005 - 0.01 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Films: Oxide backseal
Send Request25200 mmCZPBoron<100>0.010.02700750EpiSSPNotch on the 1-1-0Poly Si/Oxide BackDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: p/Boron
Res: .01-.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Frontside
Films: Poly/Oxide backseal
Epi Res: 28-42 ohm-cm
Epi Thickness: 14.25-15.75 µm
Send Request15200 mmCZPBoron<100>0.010.02700750EpiSSPNotch on the 1-0-0Oxide BacksealDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: p/Boron
Res: .01-.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Backside
Films: Oxide backseal
Epi Res: 2.5-3.5 ohm-cm
Epi Thickness: 5.6-6.4 µm
Send Request150200 mmCZPBoron<100>330700750PrimeSSPJEIDA Flat1000.16320AnyDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 3-30 ohm-cm
Thickness: 695-755 µm
Lasermark: Optional
Send Request31200 mmCZPBoron<100>812700750PrimeDSPJEIDA Flat500.065FrontsideHOLD FOR QUOTE 034457 po IN ROUTE
Diameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 8.5-11.5 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front Scribe
Send Request9200 mmCZPBoron<100>812700750PrimeSSPJEIDA FlatFrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Jeida Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 8 - 12 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Buff Back
Send Request1200 mmCZPBoron<100>7503500700750SOIDSPNotchOxide BacksealNotchBacksideDiameter: 200mm
Growth Method: CZ
Grade: SOI
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: p/Boron
Res: 750 - 3,500 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Films: Oxide backseal
RequestMoreQty AvailableDiameterMaterialTypeDopantOrientationRes. (Min)Res. (Max)Thickness (Min)Thickness (Max)GradeFinishFlatFilmFilm ThicknessParticle CountParticle SizeTTVBowWarpLasermarkDescription
Send Request8292"CZNPhosphorus<100>15254304PrimeSSP2 SEMI Flats100.510NoneDiameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request7192"CZNPhosphorus<100>1020254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 Ohmcm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request10352"CZNPhosphorus<100>510254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request4732"CZPBoron<100>0.010.02254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 0.01 - 0.02 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request182"CZPBoron<100>120254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 1 - 20 ohm-cm
Thickness: 254 - 304 µm
TTV <10 µm
Particles: <10@.5 µm
Send Request7502"CZPBoron<100>15254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 1 - 5 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request6332"CZPBoron<100>1020254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 10 - 20 ohm-cm
Thickness: 254 - 304 µm
TTV <10 µm
Particles: <10@.5 µm
Send Request5762"CZPBoron<100>510254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request373"CZNPhosphorus<100>15356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request2003"CZNPhosphorus<100>1020356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request333"CZNPhosphorus<100>1020356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request103"CZNPhosphorus<100>510356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request443"CZPBoron<100>110356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI Flats
Type/Dopant: p/Boron
Res: 1 - 10 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request2553"CZPBoron<100>1020356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request12100 mmCZNArsenic<100>0.0010.005500550PrimeSSP2 SEMI Flats0.3104040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Arsenic
Res: 0.001 - 0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request415100 mmCZNArsenic<100>0.0010.005500550PrimeSSP2 SEMI Flats0.3104040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Arsenic
Res: 0.001 - 0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request398100 mmCZNPhosphorus<100>110500550PrimeDSP2 SEMI Flats100.51040NoneDiameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 10 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@.5 µm
Send Request464100 mmCZNPhosphorus<100>15500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request213100 mmCZNPhosphorus<100>1020500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request445100 mmCZNPhosphorus<100>510500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request159100 mmCZPBoron<100>0.010.02500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 0.01 - 0.02 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request196100 mmCZPBoron<100>00.005500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: <0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request25150 mmCZPBoron<100>1100600650TestSSPJEIDA Flat300.36" P<100> 1-100 OHM
600-650um SSP
Jeida Flat
Send Request48125 mmCZNAntimony<100>0.010.02500550PrimeSSP1 SEMI FlatOxide BacksealFrontside M13 ScribeDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI standard
Type/Dopant: n/Antimony
Res: 0.01 - 0.02 ohm-cm
Thickness: 500 - 550 µm
Films: Oxide backseal
Lasermark: Frontside M13
Send Request95125 mmCZNArsenic<111> Off 4°0.004500550PrimeSSP1 SEMI FlatNoneDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP - Soft BSD
Orientation: <111> Off 4°
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: <0.004 ohm-cm
Thickness: 500 - 550 µm
Send Request96125 mmCZPBoron<111>0.0080.02500550PrimeSSP1 SEMI FlatPoly Si BackFrontsideDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <111> Off 3°
Flats: 1 SEMI standard
Type/Dopant: p/Boron
Res: 0.008 - 0.02 ohm-cm
Thickness: 500 - 550 µm
Films: Poly Si/Oxide backseal
Lasermark: Frontside M13
Send Request38150 mmCZNArsenic<100>0.0010.003600650PrimeSSPJEIDA FlatPoly Si/Oxide BackBacksideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-0-0
Type/Dopant: n/Arsenic
Res: <0.003 ohm-cm
Thickness: 600 - 650 µm
Films: Poly Si/Oxide backseal
Lasermark: Back scribe
Send Request200150 mmCZNArsenic<100>0.0020.005350400PrimeSSPJEIDA FlatOxide BacksealNoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.002 - 0.005 ohm-cm
Thickness: 350 - 400 µm
Films: Oxide backseal
Send Request725150 mmCZNArsenic<100>0.0040.007483533Prime1 SEMI FlatOxide BacksealFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.004 - 0.007 ohm-cm
Thickness: 483 - 533 µm
Films: Oxide backseal
Lasermark: Front scribe
Send Request172150 mmCZNAntimony<100>0.0070.02600650Prime1 SEMI FlatOxide BacksealNoneDiameter: 150mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.02 ohm-cm
Thickness: 600 - 650 µm
Films: Oxide backseal
Send Request23150 mmCZNAntimony<100>0.0080.025500550Prime1 SEMI FlatPoly Si/Oxide BackNone6" N/Sb <100> .008-.025 ohm-cm
500-550um Epi Wafers
Poly/Ox Back
No Scribe
Semi Flat on the 1-1-0
Send Request75150 mmCZNAntimony<100>0.010.025600650PrimeSSPJEIDA FlatPoly Si/Oxide BackFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 0-1-1
Type/Dopant: n/Antimony
Res: 0.008 - 0.025 ohm-cm
Thickness: 600 - 650 µm
Films: Poly Si/Oxide backseal
Lasermark: Front scribe
Send Request25150 mmCZNAntimony<100>0.010.02350400EpiSSP1 SEMI FlatPoly Si/Oxide BackDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: 1 SEMI standard
Type/Dopant: n/Antimony
Res: 0.01 - 0.02 ohm-cm
Thickness: 350 - 400 µm
Films: Poly Si/Oxide backseal
Send Request25150 mmCZNArsenic<100>0.00010.0044500550PrimeSSPJEIDA FlatPoly Si/Oxide Back200.31040NoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat
Type/Dopant: n/Arsenic
Res: 0.0001 - 0.0044 ohm-cm
Thickness: 500 - 550 µm
Films: Poly Si/Oxide backseal
Send Request25150 mmCZNAntimony<111>0.0080.016440490EpiJEIDA FlatPoly Si/Oxide Back6" N/Sb <111> .008-.016 ohm
440-490um EPI Wafers
Jeida flat on the 1-1-0
Poly/Ox Back
Send Request24150 mmCZNAntimony<111>0.0080.017600650PrimeSSP1 SEMI FlatDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP - Soft BSD
Orientation: <111>
Flats: 1 SEMI standard on the 0-1-1
Type/Dopant: n/Antimony
Res: 0.008 - 0.017 ohm-cm
Thickness: 600 - 650 µm
Send Request596150 mmCZPBoron<100>0.00180.003550600PrimeFlat on the 1-0-0Poly Si/Oxide BackFrontside M13 ScribeDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-0-0
Type/Dopant: p/Boron
Res: 0.0018 - 0.003 ohm-cm
Thickness: 550 - 600 µm
Films: Poly Si/Oxide backseal
Lasermark: Frontside M13 Scribe
Send Request125150 mmCZPBoron<100>0.00010.005650700EpiSSP1 Flat Non-SEMIPoly Si/Oxide Back6000300.3585FrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-0-0
Type/Dopant: p/Boron
Res: 0.0001 - 0.005 ohm-cm
Thickness: 650 - 700 µm
Lasermark: Front scribe
Films: Poly Si/Oxide backesal
Send Request1275150 mmCZPBoron<100>0.00010.005350400PrimeSSPJEIDA FlatOxide BacksealFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat
Type/Dopant: p/Boron
Res: 0.0001 - 0.005 ohm-cm
Thickness: 350 - 400 µm
Films: Oxide backseal
Send Request32150 mmCZPBoron<100>510495555EpiSSPJEIDA FlatPoly Si/Oxide BackNoneDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-1-0
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 495 - 555 µm
Send Request24150 mmCZPBoron<100>70100525575PrimeSSPJEIDA Flat400.163317None6" P<100> 70-100 ohm-cm
525-575um SSP Wafers
No Scribe
Jeida flat on the 1-1-0
Send Request25150 mmCZPBoron<100> Off 4°70100525575PrimeSSPJEIDA FlatPoly Si/Oxide BackNoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100> Off 4°
Flats: JEIDA flat on the 1-1-0
Type/Dopant: P/boron
Res: 70 - 100 ohm-cm
Thickness: 525 - 575 µm
Films: Poly Si/Oxide backseal
Send Request749150 mmCZPBoron<100>510505535EpiJEIDA FlatBacksideDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: DSP
Orientation: <100>
Flats: 1 JEIDA flat on the 1-1-0
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 500 - 550 µm
Lasermark: Back scribe
Send Request50150 mmCZPBoron<111> Off 4°0.0080.015600650PrimeSSP1 SEMI FlatPoly Si/Oxide Back6000120.3105050BacksideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <111> Off 4°
Flats: 1 SEMI standard flat on the 0-1-1
Type/Dopant: p/Boron
Res: 0.008 - 0.015 ohm-cm
Thickness: 600 - 650 µm
Lasermark: Back scribe
Films: Poly Si/Oxide backseal
Send Request65200 mmCZNRed Phosphorus<100>0.0010.002700750EpiSSPNotchPoly Si/Oxide BackDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Red Phosphorus
Res: 0.001 - 0.002 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si/Oxide backseal
Epi Res: 0.1 - 0.2 ohm-cm
Epi Thickness: 4 - 6 µm
Send Request50200 mmCZNAntimony<100>0.0070.025700750Prime1 SEMI FlatOxide BacksealBacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.025 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Films: Oxide backseal
Send Request50200 mmCZNAntimony<100>0.0070.02700750Prime1 SEMI FlatOxide BacksealFrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Films: Oxide backseal
Send Request25200 mmCZNAntimony<100>0.0080.03700750PrimeSSPNotchPoly Si BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Antimony
Res: .008-.03 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si backseal
Send Request275200 mmCZNRed Phosphorus<100>0.00120.0017700750PrimeNon-SEMI NotchPoly Si/Oxide BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Red Phosphorus
Res: <0.0017 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si/Oxide backseal
Send Request50200 mmCZNRed Phosphorus<100>0.00170.0029700750PrimeNotch on the 0-1-0Poly Si/Oxide BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 0-1-0
Type/Dopant: n/Red Phosphorus
Res: 0.0017-.0029 ohm-cm
Thickness: 700-750 µm
Poly/Ox Back
No Scribe
Send Request37200 mmCZNArsenic<100> Off 2°0.0010.0045700750PrimeNotchOxide BacksealDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100> Off 2°
Flats: Notch on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.001 - 0.0045 ohm-cm
Thickness: 700 - 750 µm
Films: Oxide backseal
Send Request3200 mmCZNPhosphorus<100>110700750PrimeDSPNotch on the 1-1-0100.1211010BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Phosphorus
Res: 1 - 10 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request17200 mmCZNPhosphorus<100>2040700750PrimeDSPNotch on the 0-0-1200.161520BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 0-0-1
Type/Dopant: n/Phosphorus
Res: 20 - 40 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request26200 mmCZNPhosphorus<100>2550700750PrimeDSPNotch on the 1-0-0200.161520BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Phosphorus
Res: 25 - 50 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request25200 mmCZNPhosphorus<100>612650700EpiNotchPoly Si/Oxide BackBacksideDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Phosphorus
Res: 6 - 12 ohm-cm
Thickness: 650 - 700 µm
Lasermark: Back scribe
Films: Poly Si/Oxide backseal
Send Request50200 mmCZPBoron<100>0.0050.01700750EpiDSP1 SEMI FlatOxide Backseal35002034FrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: DSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: p/Boron
Res: 0.005 - 0.01 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Films: Oxide backseal
Send Request25200 mmCZPBoron<100>0.010.02700750EpiSSPNotch on the 1-1-0Poly Si/Oxide BackDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: p/Boron
Res: .01-.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Frontside
Films: Poly/Oxide backseal
Epi Res: 28-42 ohm-cm
Epi Thickness: 14.25-15.75 µm
Send Request15200 mmCZPBoron<100>0.010.02700750EpiSSPNotch on the 1-0-0Oxide BacksealDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: p/Boron
Res: .01-.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Backside
Films: Oxide backseal
Epi Res: 2.5-3.5 ohm-cm
Epi Thickness: 5.6-6.4 µm
Send Request150200 mmCZPBoron<100>330700750PrimeSSPJEIDA Flat1000.16320AnyDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 3-30 ohm-cm
Thickness: 695-755 µm
Lasermark: Optional
Send Request31200 mmCZPBoron<100>812700750PrimeDSPJEIDA Flat500.065FrontsideHOLD FOR QUOTE 034457 po IN ROUTE
Diameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 8.5-11.5 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front Scribe
Send Request9200 mmCZPBoron<100>812700750PrimeSSPJEIDA FlatFrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Jeida Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 8 - 12 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Buff Back
Send Request1200 mmCZPBoron<100>7503500700750SOIDSPNotchOxide BacksealNotchBacksideDiameter: 200mm
Growth Method: CZ
Grade: SOI
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: p/Boron
Res: 750 - 3,500 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Films: Oxide backseal
RequestMoreQty AvailableDiameterMaterialTypeDopantOrientationRes. (Min)Res. (Max)Thickness (Min)Thickness (Max)GradeFinishFlatFilmFilm ThicknessParticle CountParticle SizeTTVBowWarpLasermarkDescription
Send Request8292"CZNPhosphorus<100>15254304PrimeSSP2 SEMI Flats100.510NoneDiameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request7192"CZNPhosphorus<100>1020254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 Ohmcm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request10352"CZNPhosphorus<100>510254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request4732"CZPBoron<100>0.010.02254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 0.01 - 0.02 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request182"CZPBoron<100>120254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 1 - 20 ohm-cm
Thickness: 254 - 304 µm
TTV <10 µm
Particles: <10@.5 µm
Send Request7502"CZPBoron<100>15254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 1 - 5 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request6332"CZPBoron<100>1020254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 10 - 20 ohm-cm
Thickness: 254 - 304 µm
TTV <10 µm
Particles: <10@.5 µm
Send Request5762"CZPBoron<100>510254304PrimeSSP2 SEMI Flats100.510Diameter: 2"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 254 - 304 µm
TTV: <10 µm
Particles: <10@.5 µm
Send Request373"CZNPhosphorus<100>15356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request2003"CZNPhosphorus<100>1020356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request333"CZNPhosphorus<100>1020356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request103"CZNPhosphorus<100>510356406PrimeSSP2 SEMI Flats150.51530Diameter: 3"
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <15@.5 µm
Send Request443"CZPBoron<100>110356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI Flats
Type/Dopant: p/Boron
Res: 1 - 10 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request2553"CZPBoron<100>1020356406PrimeDSP2 SEMI Flats100.51530NoneDiameter: 3"
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 10 - 20 ohm-cm
Thickness: 356 - 406 µm
TTV: <15 µm
Bow: <30 µm
Particles: <10@.5 µm
Send Request12100 mmCZNArsenic<100>0.0010.005500550PrimeSSP2 SEMI Flats0.3104040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Arsenic
Res: 0.001 - 0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request415100 mmCZNArsenic<100>0.0010.005500550PrimeSSP2 SEMI Flats0.3104040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Arsenic
Res: 0.001 - 0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request398100 mmCZNPhosphorus<100>110500550PrimeDSP2 SEMI Flats100.51040NoneDiameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 10 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@.5 µm
Send Request464100 mmCZNPhosphorus<100>15500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 1 - 5 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request213100 mmCZNPhosphorus<100>1020500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 10 - 20 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request445100 mmCZNPhosphorus<100>510500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: n/Phosphorus
Res: 5 - 10 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request159100 mmCZPBoron<100>0.010.02500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: 0.01 - 0.02 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request196100 mmCZPBoron<100>00.005500550PrimeSSP2 SEMI Flats100.31040Diameter: 100 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 2 SEMI standard
Type/Dopant: p/Boron
Res: <0.005 ohm-cm
Thickness: 500 - 550 µm
TTV: <10 µm
Bow: <40 µm
Particles: <10@0.3 µm
Send Request25150 mmCZPBoron<100>1100600650TestSSPJEIDA Flat300.36" P<100> 1-100 OHM
600-650um SSP
Jeida Flat
Send Request48125 mmCZNAntimony<100>0.010.02500550PrimeSSP1 SEMI FlatOxide BacksealFrontside M13 ScribeDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI standard
Type/Dopant: n/Antimony
Res: 0.01 - 0.02 ohm-cm
Thickness: 500 - 550 µm
Films: Oxide backseal
Lasermark: Frontside M13
Send Request95125 mmCZNArsenic<111> Off 4°0.004500550PrimeSSP1 SEMI FlatNoneDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP - Soft BSD
Orientation: <111> Off 4°
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: <0.004 ohm-cm
Thickness: 500 - 550 µm
Send Request96125 mmCZPBoron<111>0.0080.02500550PrimeSSP1 SEMI FlatPoly Si BackFrontsideDiameter: 125 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <111> Off 3°
Flats: 1 SEMI standard
Type/Dopant: p/Boron
Res: 0.008 - 0.02 ohm-cm
Thickness: 500 - 550 µm
Films: Poly Si/Oxide backseal
Lasermark: Frontside M13
Send Request38150 mmCZNArsenic<100>0.0010.003600650PrimeSSPJEIDA FlatPoly Si/Oxide BackBacksideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-0-0
Type/Dopant: n/Arsenic
Res: <0.003 ohm-cm
Thickness: 600 - 650 µm
Films: Poly Si/Oxide backseal
Lasermark: Back scribe
Send Request200150 mmCZNArsenic<100>0.0020.005350400PrimeSSPJEIDA FlatOxide BacksealNoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.002 - 0.005 ohm-cm
Thickness: 350 - 400 µm
Films: Oxide backseal
Send Request725150 mmCZNArsenic<100>0.0040.007483533Prime1 SEMI FlatOxide BacksealFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.004 - 0.007 ohm-cm
Thickness: 483 - 533 µm
Films: Oxide backseal
Lasermark: Front scribe
Send Request172150 mmCZNAntimony<100>0.0070.02600650Prime1 SEMI FlatOxide BacksealNoneDiameter: 150mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.02 ohm-cm
Thickness: 600 - 650 µm
Films: Oxide backseal
Send Request23150 mmCZNAntimony<100>0.0080.025500550Prime1 SEMI FlatPoly Si/Oxide BackNone6" N/Sb <100> .008-.025 ohm-cm
500-550um Epi Wafers
Poly/Ox Back
No Scribe
Semi Flat on the 1-1-0
Send Request75150 mmCZNAntimony<100>0.010.025600650PrimeSSPJEIDA FlatPoly Si/Oxide BackFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 0-1-1
Type/Dopant: n/Antimony
Res: 0.008 - 0.025 ohm-cm
Thickness: 600 - 650 µm
Films: Poly Si/Oxide backseal
Lasermark: Front scribe
Send Request25150 mmCZNAntimony<100>0.010.02350400EpiSSP1 SEMI FlatPoly Si/Oxide BackDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: 1 SEMI standard
Type/Dopant: n/Antimony
Res: 0.01 - 0.02 ohm-cm
Thickness: 350 - 400 µm
Films: Poly Si/Oxide backseal
Send Request25150 mmCZNArsenic<100>0.00010.0044500550PrimeSSPJEIDA FlatPoly Si/Oxide Back200.31040NoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat
Type/Dopant: n/Arsenic
Res: 0.0001 - 0.0044 ohm-cm
Thickness: 500 - 550 µm
Films: Poly Si/Oxide backseal
Send Request25150 mmCZNAntimony<111>0.0080.016440490EpiJEIDA FlatPoly Si/Oxide Back6" N/Sb <111> .008-.016 ohm
440-490um EPI Wafers
Jeida flat on the 1-1-0
Poly/Ox Back
Send Request24150 mmCZNAntimony<111>0.0080.017600650PrimeSSP1 SEMI FlatDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP - Soft BSD
Orientation: <111>
Flats: 1 SEMI standard on the 0-1-1
Type/Dopant: n/Antimony
Res: 0.008 - 0.017 ohm-cm
Thickness: 600 - 650 µm
Send Request596150 mmCZPBoron<100>0.00180.003550600PrimeFlat on the 1-0-0Poly Si/Oxide BackFrontside M13 ScribeDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-0-0
Type/Dopant: p/Boron
Res: 0.0018 - 0.003 ohm-cm
Thickness: 550 - 600 µm
Films: Poly Si/Oxide backseal
Lasermark: Frontside M13 Scribe
Send Request125150 mmCZPBoron<100>0.00010.005650700EpiSSP1 Flat Non-SEMIPoly Si/Oxide Back6000300.3585FrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-0-0
Type/Dopant: p/Boron
Res: 0.0001 - 0.005 ohm-cm
Thickness: 650 - 700 µm
Lasermark: Front scribe
Films: Poly Si/Oxide backesal
Send Request1275150 mmCZPBoron<100>0.00010.005350400PrimeSSPJEIDA FlatOxide BacksealFrontsideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: JEIDA flat
Type/Dopant: p/Boron
Res: 0.0001 - 0.005 ohm-cm
Thickness: 350 - 400 µm
Films: Oxide backseal
Send Request32150 mmCZPBoron<100>510495555EpiSSPJEIDA FlatPoly Si/Oxide BackNoneDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: JEIDA flat on the 1-1-0
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 495 - 555 µm
Send Request24150 mmCZPBoron<100>70100525575PrimeSSPJEIDA Flat400.163317None6" P<100> 70-100 ohm-cm
525-575um SSP Wafers
No Scribe
Jeida flat on the 1-1-0
Send Request25150 mmCZPBoron<100> Off 4°70100525575PrimeSSPJEIDA FlatPoly Si/Oxide BackNoneDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100> Off 4°
Flats: JEIDA flat on the 1-1-0
Type/Dopant: P/boron
Res: 70 - 100 ohm-cm
Thickness: 525 - 575 µm
Films: Poly Si/Oxide backseal
Send Request749150 mmCZPBoron<100>510505535EpiJEIDA FlatBacksideDiameter: 150 mm
Growth Method: CZ
Grade: Epi
Finish: DSP
Orientation: <100>
Flats: 1 JEIDA flat on the 1-1-0
Type/Dopant: p/Boron
Res: 5 - 10 ohm-cm
Thickness: 500 - 550 µm
Lasermark: Back scribe
Send Request50150 mmCZPBoron<111> Off 4°0.0080.015600650PrimeSSP1 SEMI FlatPoly Si/Oxide Back6000120.3105050BacksideDiameter: 150 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <111> Off 4°
Flats: 1 SEMI standard flat on the 0-1-1
Type/Dopant: p/Boron
Res: 0.008 - 0.015 ohm-cm
Thickness: 600 - 650 µm
Lasermark: Back scribe
Films: Poly Si/Oxide backseal
Send Request65200 mmCZNRed Phosphorus<100>0.0010.002700750EpiSSPNotchPoly Si/Oxide BackDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Red Phosphorus
Res: 0.001 - 0.002 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si/Oxide backseal
Epi Res: 0.1 - 0.2 ohm-cm
Epi Thickness: 4 - 6 µm
Send Request50200 mmCZNAntimony<100>0.0070.025700750Prime1 SEMI FlatOxide BacksealBacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.025 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Films: Oxide backseal
Send Request50200 mmCZNAntimony<100>0.0070.02700750Prime1 SEMI FlatOxide BacksealFrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: n/Antimony
Res: 0.007 - 0.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Films: Oxide backseal
Send Request25200 mmCZNAntimony<100>0.0080.03700750PrimeSSPNotchPoly Si BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Antimony
Res: .008-.03 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si backseal
Send Request275200 mmCZNRed Phosphorus<100>0.00120.0017700750PrimeNon-SEMI NotchPoly Si/Oxide BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Red Phosphorus
Res: <0.0017 ohm-cm
Thickness: 700 - 750 µm
Films: Poly Si/Oxide backseal
Send Request50200 mmCZNRed Phosphorus<100>0.00170.0029700750PrimeNotch on the 0-1-0Poly Si/Oxide BackNoneDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Notch on the 0-1-0
Type/Dopant: n/Red Phosphorus
Res: 0.0017-.0029 ohm-cm
Thickness: 700-750 µm
Poly/Ox Back
No Scribe
Send Request37200 mmCZNArsenic<100> Off 2°0.0010.0045700750PrimeNotchOxide BacksealDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100> Off 2°
Flats: Notch on the 1-1-0
Type/Dopant: n/Arsenic
Res: 0.001 - 0.0045 ohm-cm
Thickness: 700 - 750 µm
Films: Oxide backseal
Send Request3200 mmCZNPhosphorus<100>110700750PrimeDSPNotch on the 1-1-0100.1211010BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Phosphorus
Res: 1 - 10 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request17200 mmCZNPhosphorus<100>2040700750PrimeDSPNotch on the 0-0-1200.161520BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 0-0-1
Type/Dopant: n/Phosphorus
Res: 20 - 40 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request26200 mmCZNPhosphorus<100>2550700750PrimeDSPNotch on the 1-0-0200.161520BacksideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: n/Phosphorus
Res: 25 - 50 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Send Request25200 mmCZNPhosphorus<100>612650700EpiNotchPoly Si/Oxide BackBacksideDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: n/Phosphorus
Res: 6 - 12 ohm-cm
Thickness: 650 - 700 µm
Lasermark: Back scribe
Films: Poly Si/Oxide backseal
Send Request50200 mmCZPBoron<100>0.0050.01700750EpiDSP1 SEMI FlatOxide Backseal35002034FrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: DSP
Orientation: <100>
Flats: 1 SEMI flat on the 1-1-0
Type/Dopant: p/Boron
Res: 0.005 - 0.01 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Films: Oxide backseal
Send Request25200 mmCZPBoron<100>0.010.02700750EpiSSPNotch on the 1-1-0Poly Si/Oxide BackDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: p/Boron
Res: .01-.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Frontside
Films: Poly/Oxide backseal
Epi Res: 28-42 ohm-cm
Epi Thickness: 14.25-15.75 µm
Send Request15200 mmCZPBoron<100>0.010.02700750EpiSSPNotch on the 1-0-0Oxide BacksealDiameter: 200 mm
Growth Method: CZ
Grade: Epi
Finish: SSP
Orientation: <100>
Flats: Notch on the 1-0-0
Type/Dopant: p/Boron
Res: .01-.02 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Backside
Films: Oxide backseal
Epi Res: 2.5-3.5 ohm-cm
Epi Thickness: 5.6-6.4 µm
Send Request150200 mmCZPBoron<100>330700750PrimeSSPJEIDA Flat1000.16320AnyDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 3-30 ohm-cm
Thickness: 695-755 µm
Lasermark: Optional
Send Request31200 mmCZPBoron<100>812700750PrimeDSPJEIDA Flat500.065FrontsideHOLD FOR QUOTE 034457 po IN ROUTE
Diameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: DSP
Orientation: <100>
Flats: Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 8.5-11.5 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front Scribe
Send Request9200 mmCZPBoron<100>812700750PrimeSSPJEIDA FlatFrontsideDiameter: 200 mm
Growth Method: CZ
Grade: Prime
Finish: SSP
Orientation: <100>
Flats: Jeida Flat on the 1-1-0
Type/Dopant: p/Boron
Res: 8 - 12 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Front scribe
Buff Back
Send Request1200 mmCZPBoron<100>7503500700750SOIDSPNotchOxide BacksealNotchBacksideDiameter: 200mm
Growth Method: CZ
Grade: SOI
Finish: DSP
Orientation: <100>
Flats: Notch on the 1-1-0
Type/Dopant: p/Boron
Res: 750 - 3,500 ohm-cm
Thickness: 700 - 750 µm
Lasermark: Back scribe
Films: Oxide backseal