TABLE - ABC GmbH

Our Silicon Wafer Inventory

We, Active Business Company GmbH and our long-standing business partners, have established a strategic sales partnership. Due to this reason, all wafers on stock at our partners can be reviewed and ordered online. Order your Silicon Wafer this way and we will deliver within a week.

Our inventory list contains a large choice of different silicon wafer specifications in well-known quality. Thanks to our convenient online search and filter function, you can quickly get to the silicon wafers that meet your requirements.

Extensive search functions help you to find adequate silicon wafers. The filter options include all important specifications such as diameter, type and doping, the resistivity, the thickness and the surface quality of the silicon wafers. After each selection, the inventory list is updated automatically. One click on “more” accesses you to the complete available specification.

To change a selected specification, just click on the selected filter below the selected specification.

Beyond that, it is possible to sort the silicon wafer inventory list. A simple click in the corresponding field of the criterion (for example, Qty Available, Diameter, Material, etc.) in the first row of the table performs the filter function.

An additional search field assists you in further narrowing the silicon wafer inventory list. After the successful search of your silicon wafers, you can send us your request directly via the button “send request” via email. If you want to add a coating (silicon oxide, silicon nitride, copper, titanium, gold or others), dicing or thinning, you can easily complete this information within the request.

The minimum order quantity (MOQ) is one wafer cassette and therefore 25 wafers. Exceptions to this are so-called partial cassettes, i.e. silicon wafer cassettes, which are only partially filled. In these cases, the minimum order quantity is the quantity in the respective cassettes.

After receiving your request, it will be processed immediately. We will send you the appropriate quotation shortly.

In case you cannot find suitable wafers there, please be so kind to send us your request using our contact form.

Reset filters




	Request More Qty Available Diameter Material Type Dopant Orientation Res. (Min) Res. (Max) Thickness (Min) Thickness (Max) Grade Finish Flat Film Film Thickness Particle Count Particle Size TTV Bow Warp Lasermark Description




	Send Request 829 2" CZ N Phosphorus <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 None Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 719 2" CZ N Phosphorus <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 Ohmcm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 1035 2" CZ N Phosphorus <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 473 2" CZ P Boron <100> 0.01 0.02 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 254 - 304 µm

TTV:  <10 µm

Particles: <10@.5 µm


	Send Request 18 2" CZ P Boron <100> 1 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Send Request 750 2" CZ P Boron <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 633 2" CZ P Boron <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Send Request 576 2" CZ P Boron <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 37 3" CZ N Phosphorus <100> 1 5 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 200 3" CZ N Phosphorus <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 33 3" CZ N Phosphorus <100> 10 20 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 10 3" CZ N Phosphorus <100> 5 10 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 44 3" CZ P Boron <100> 1 10 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI Flats

Type/Dopant: p/Boron

Res: 1 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm 

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 255 3" CZ P Boron <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 12 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 415 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 398 100 mm CZ N Phosphorus <100> 1 10 500 550 Prime DSP 2 SEMI Flats 10 0.5 10 40 None Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@.5 µm


	Send Request 464 100 mm CZ N Phosphorus <100> 1 5 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 213 100 mm CZ N Phosphorus <100> 10 20 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 445 100 mm CZ N Phosphorus <100> 5 10 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 159 100 mm CZ P Boron <100> 0.01 0.02 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 196 100 mm CZ P Boron <100> 0 0.005 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: <0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 25 150 mm CZ P Boron <100> 1 100 600 650 Test SSP JEIDA Flat 30 0.3 6" P<100> 1-100 OHM

600-650um SSP

Jeida Flat


	Send Request 48 125 mm CZ N Antimony <100> 0.01 0.02 500 550 Prime SSP 1 SEMI Flat Oxide Backseal Frontside M13 Scribe Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Oxide backseal

Lasermark: Frontside M13


	Send Request 95 125 mm CZ N Arsenic <111> Off 4° 0.004 500 550 Prime SSP 1 SEMI Flat None Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> Off 4°

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: <0.004 ohm-cm

Thickness: 500 - 550 µm


	Send Request 96 125 mm CZ P Boron <111> 0.008 0.02 500 550 Prime SSP 1 SEMI Flat Poly Si Back Frontside Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 3°

Flats: 1 SEMI standard

Type/Dopant: p/Boron

Res: 0.008 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13


	Send Request 38 150 mm CZ N Arsenic <100> 0.001 0.003 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 1-0-0

Type/Dopant: n/Arsenic

Res: <0.003 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Back scribe


	Send Request 200 150 mm CZ N Arsenic <100> 0.002 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.002 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Send Request 725 150 mm CZ N Arsenic <100> 0.004 0.007 483 533 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.004 - 0.007 ohm-cm

Thickness: 483 - 533 µm

Films: Oxide backseal

Lasermark: Front scribe   


	Send Request 172 150 mm CZ N Antimony <100> 0.007 0.02 600 650 Prime 1 SEMI Flat Oxide Backseal None Diameter: 150mm 

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 600 - 650 µm

Films: Oxide backseal


	Send Request 23 150 mm CZ N Antimony <100> 0.008 0.025 500 550 Prime 1 SEMI Flat Poly Si/Oxide Back None 6" N/Sb <100> .008-.025 ohm-cm

500-550um Epi Wafers

Poly/Ox Back

No Scribe

Semi Flat on the 1-1-0  


	Send Request 75 150 mm CZ N Antimony <100> 0.01 0.025 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.025 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Front scribe


	Send Request 25 150 mm CZ N Antimony <100> 0.01 0.02 350 400 Epi SSP 1 SEMI Flat Poly Si/Oxide Back Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 350 - 400 µm

Films: Poly Si/Oxide backseal


	Send Request 25 150 mm CZ N Arsenic <100> 0.0001 0.0044 500 550 Prime SSP JEIDA Flat Poly Si/Oxide Back 20 0.3 10 40 None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat

Type/Dopant: n/Arsenic

Res: 0.0001 - 0.0044 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal


	Send Request 25 150 mm CZ N Antimony <111> 0.008 0.016 440 490 Epi JEIDA Flat Poly Si/Oxide Back 6" N/Sb <111> .008-.016 ohm

440-490um EPI Wafers

Jeida flat on the 1-1-0

Poly/Ox Back


	Send Request 24 150 mm CZ N Antimony <111> 0.008 0.017 600 650 Prime SSP 1 SEMI Flat Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> 

Flats: 1 SEMI standard on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.017 ohm-cm

Thickness: 600 - 650 µm


	Send Request 596 150 mm CZ P Boron <100> 0.0018 0.003 550 600 Prime Flat on the 1-0-0 Poly Si/Oxide Back Frontside M13 Scribe Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0018 - 0.003 ohm-cm

Thickness: 550 - 600 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13 Scribe


	Send Request 125 150 mm CZ P Boron <100> 0.0001 0.005 650 700 Epi SSP 1 Flat Non-SEMI Poly Si/Oxide Back 6000 30 0.3 5 85 Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Front scribe

Films: Poly Si/Oxide backesal


	Send Request 1275 150 mm CZ P Boron <100> 0.0001 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Send Request 32 150 mm CZ P Boron <100> 5 10 495 555 Epi SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 495 - 555 µm


	Send Request 24 150 mm CZ P Boron <100> 70 100 525 575 Prime SSP JEIDA Flat 40 0.16 3 3 17 None 6" P<100> 70-100 ohm-cm

525-575um SSP Wafers

No Scribe

Jeida flat on the 1-1-0


	Send Request 25 150 mm CZ P Boron <100> Off 4° 70 100 525 575 Prime SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 4°

Flats: JEIDA flat on the 1-1-0

Type/Dopant: P/boron 

Res: 70 - 100 ohm-cm

Thickness: 525 - 575 µm

Films: Poly Si/Oxide backseal


	Send Request 749 150 mm CZ P Boron <100> 5 10 505 535 Epi JEIDA Flat Backside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

Lasermark: Back scribe


	Send Request 50 150 mm CZ P Boron <111> Off 4° 0.008 0.015 600 650 Prime SSP 1 SEMI Flat Poly Si/Oxide Back 6000 12 0.3 10 50 50 Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 4°

Flats: 1 SEMI standard flat on the 0-1-1

Type/Dopant: p/Boron

Res: 0.008 - 0.015 ohm-cm

Thickness: 600 - 650 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Send Request 65 200 mm CZ N Red Phosphorus <100> 0.001 0.002 700 750 Epi SSP Notch Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: 0.001 - 0.002 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal

Epi Res: 0.1 - 0.2 ohm-cm

Epi Thickness: 4 - 6 µm


	Send Request 50 200 mm CZ N Antimony <100> 0.007 0.025 700 750 Prime 1 SEMI Flat Oxide Backseal Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.025 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal


	Send Request 50 200 mm CZ N Antimony <100> 0.007 0.02 700 750 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Send Request 25 200 mm CZ N Antimony <100> 0.008 0.03 700 750 Prime SSP Notch Poly Si Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Antimony

Res: .008-.03 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si backseal


	Send Request 275 200 mm CZ N Red Phosphorus <100> 0.0012 0.0017 700 750 Prime Non-SEMI Notch Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: <0.0017 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal




	Send Request 50 200 mm CZ N Red Phosphorus <100> 0.0017 0.0029 700 750 Prime Notch on the 0-1-0 Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Notch on the 0-1-0

Type/Dopant: n/Red Phosphorus

Res: 0.0017-.0029 ohm-cm

Thickness: 700-750 µm

Poly/Ox Back

No Scribe


	Send Request 37 200 mm CZ N Arsenic <100> Off 2° 0.001 0.0045 700 750 Prime Notch Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 2°

Flats: Notch on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.001 - 0.0045 ohm-cm

Thickness: 700 - 750 µm

Films: Oxide backseal  


	Send Request 3 200 mm CZ N Phosphorus <100> 1 10 700 750 Prime DSP Notch on the 1-1-0 10 0.12 1 10 10 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 17 200 mm CZ N Phosphorus <100> 20 40 700 750 Prime DSP Notch on the 0-0-1 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 0-0-1

Type/Dopant: n/Phosphorus

Res: 20 - 40 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 26 200 mm CZ N Phosphorus <100> 25 50 700 750 Prime DSP Notch on the 1-0-0 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Phosphorus

Res: 25 - 50 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 25 200 mm CZ N Phosphorus <100> 6 12 650 700 Epi Notch Poly Si/Oxide Back Backside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 6 - 12 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Send Request 50 200 mm CZ P Boron <100> 0.005 0.01 700 750 Epi DSP 1 SEMI Flat Oxide Backseal 3500 2 0 34 Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: p/Boron

Res: 0.005 - 0.01 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Send Request 25 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-1-0 Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Frontside

Films: Poly/Oxide backseal

Epi Res: 28-42 ohm-cm

Epi Thickness: 14.25-15.75 µm


	Send Request 15 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-0-0 Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Backside

Films: Oxide backseal

Epi Res: 2.5-3.5 ohm-cm

Epi Thickness: 5.6-6.4 µm


	Send Request 150 200 mm CZ P Boron <100> 3 30 700 750 Prime SSP JEIDA Flat 100 0.16 3 20 Any Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 3-30 ohm-cm

Thickness: 695-755 µm

Lasermark: Optional


	Send Request 31 200 mm CZ P Boron <100> 8 12 700 750 Prime DSP JEIDA Flat 50 0.065 Frontside HOLD FOR QUOTE 034457 po IN ROUTE

Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8.5-11.5 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front Scribe


	Send Request 9 200 mm CZ P Boron <100> 8 12 700 750 Prime SSP JEIDA Flat Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Jeida Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8 - 12 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Buff Back


	Send Request 1 200 mm CZ P Boron <100> 750 3500 700 750 SOI DSP Notch Oxide Backseal Notch Backside Diameter: 200mm 

Growth Method: CZ

Grade: SOI

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: 750 - 3,500 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal




	Request More Qty Available Diameter Material Type Dopant Orientation Res. (Min) Res. (Max) Thickness (Min) Thickness (Max) Grade Finish Flat Film Film Thickness Particle Count Particle Size TTV Bow Warp Lasermark Description




	Send Request 829 2" CZ N Phosphorus <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 None Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 719 2" CZ N Phosphorus <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 Ohmcm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 1035 2" CZ N Phosphorus <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 473 2" CZ P Boron <100> 0.01 0.02 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 254 - 304 µm

TTV:  <10 µm

Particles: <10@.5 µm


	Send Request 18 2" CZ P Boron <100> 1 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Send Request 750 2" CZ P Boron <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 633 2" CZ P Boron <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Send Request 576 2" CZ P Boron <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 37 3" CZ N Phosphorus <100> 1 5 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 200 3" CZ N Phosphorus <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 33 3" CZ N Phosphorus <100> 10 20 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 10 3" CZ N Phosphorus <100> 5 10 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 44 3" CZ P Boron <100> 1 10 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI Flats

Type/Dopant: p/Boron

Res: 1 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm 

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 255 3" CZ P Boron <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 12 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 415 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 398 100 mm CZ N Phosphorus <100> 1 10 500 550 Prime DSP 2 SEMI Flats 10 0.5 10 40 None Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@.5 µm


	Send Request 464 100 mm CZ N Phosphorus <100> 1 5 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 213 100 mm CZ N Phosphorus <100> 10 20 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 445 100 mm CZ N Phosphorus <100> 5 10 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 159 100 mm CZ P Boron <100> 0.01 0.02 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 196 100 mm CZ P Boron <100> 0 0.005 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: <0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 25 150 mm CZ P Boron <100> 1 100 600 650 Test SSP JEIDA Flat 30 0.3 6" P<100> 1-100 OHM

600-650um SSP

Jeida Flat


	Send Request 48 125 mm CZ N Antimony <100> 0.01 0.02 500 550 Prime SSP 1 SEMI Flat Oxide Backseal Frontside M13 Scribe Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Oxide backseal

Lasermark: Frontside M13


	Send Request 95 125 mm CZ N Arsenic <111> Off 4° 0.004 500 550 Prime SSP 1 SEMI Flat None Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> Off 4°

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: <0.004 ohm-cm

Thickness: 500 - 550 µm


	Send Request 96 125 mm CZ P Boron <111> 0.008 0.02 500 550 Prime SSP 1 SEMI Flat Poly Si Back Frontside Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 3°

Flats: 1 SEMI standard

Type/Dopant: p/Boron

Res: 0.008 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13


	Send Request 38 150 mm CZ N Arsenic <100> 0.001 0.003 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 1-0-0

Type/Dopant: n/Arsenic

Res: <0.003 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Back scribe


	Send Request 200 150 mm CZ N Arsenic <100> 0.002 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.002 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Send Request 725 150 mm CZ N Arsenic <100> 0.004 0.007 483 533 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.004 - 0.007 ohm-cm

Thickness: 483 - 533 µm

Films: Oxide backseal

Lasermark: Front scribe   


	Send Request 172 150 mm CZ N Antimony <100> 0.007 0.02 600 650 Prime 1 SEMI Flat Oxide Backseal None Diameter: 150mm 

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 600 - 650 µm

Films: Oxide backseal


	Send Request 23 150 mm CZ N Antimony <100> 0.008 0.025 500 550 Prime 1 SEMI Flat Poly Si/Oxide Back None 6" N/Sb <100> .008-.025 ohm-cm

500-550um Epi Wafers

Poly/Ox Back

No Scribe

Semi Flat on the 1-1-0  


	Send Request 75 150 mm CZ N Antimony <100> 0.01 0.025 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.025 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Front scribe


	Send Request 25 150 mm CZ N Antimony <100> 0.01 0.02 350 400 Epi SSP 1 SEMI Flat Poly Si/Oxide Back Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 350 - 400 µm

Films: Poly Si/Oxide backseal


	Send Request 25 150 mm CZ N Arsenic <100> 0.0001 0.0044 500 550 Prime SSP JEIDA Flat Poly Si/Oxide Back 20 0.3 10 40 None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat

Type/Dopant: n/Arsenic

Res: 0.0001 - 0.0044 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal


	Send Request 25 150 mm CZ N Antimony <111> 0.008 0.016 440 490 Epi JEIDA Flat Poly Si/Oxide Back 6" N/Sb <111> .008-.016 ohm

440-490um EPI Wafers

Jeida flat on the 1-1-0

Poly/Ox Back


	Send Request 24 150 mm CZ N Antimony <111> 0.008 0.017 600 650 Prime SSP 1 SEMI Flat Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> 

Flats: 1 SEMI standard on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.017 ohm-cm

Thickness: 600 - 650 µm


	Send Request 596 150 mm CZ P Boron <100> 0.0018 0.003 550 600 Prime Flat on the 1-0-0 Poly Si/Oxide Back Frontside M13 Scribe Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0018 - 0.003 ohm-cm

Thickness: 550 - 600 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13 Scribe


	Send Request 125 150 mm CZ P Boron <100> 0.0001 0.005 650 700 Epi SSP 1 Flat Non-SEMI Poly Si/Oxide Back 6000 30 0.3 5 85 Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Front scribe

Films: Poly Si/Oxide backesal


	Send Request 1275 150 mm CZ P Boron <100> 0.0001 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Send Request 32 150 mm CZ P Boron <100> 5 10 495 555 Epi SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 495 - 555 µm


	Send Request 24 150 mm CZ P Boron <100> 70 100 525 575 Prime SSP JEIDA Flat 40 0.16 3 3 17 None 6" P<100> 70-100 ohm-cm

525-575um SSP Wafers

No Scribe

Jeida flat on the 1-1-0


	Send Request 25 150 mm CZ P Boron <100> Off 4° 70 100 525 575 Prime SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 4°

Flats: JEIDA flat on the 1-1-0

Type/Dopant: P/boron 

Res: 70 - 100 ohm-cm

Thickness: 525 - 575 µm

Films: Poly Si/Oxide backseal


	Send Request 749 150 mm CZ P Boron <100> 5 10 505 535 Epi JEIDA Flat Backside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

Lasermark: Back scribe


	Send Request 50 150 mm CZ P Boron <111> Off 4° 0.008 0.015 600 650 Prime SSP 1 SEMI Flat Poly Si/Oxide Back 6000 12 0.3 10 50 50 Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 4°

Flats: 1 SEMI standard flat on the 0-1-1

Type/Dopant: p/Boron

Res: 0.008 - 0.015 ohm-cm

Thickness: 600 - 650 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Send Request 65 200 mm CZ N Red Phosphorus <100> 0.001 0.002 700 750 Epi SSP Notch Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: 0.001 - 0.002 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal

Epi Res: 0.1 - 0.2 ohm-cm

Epi Thickness: 4 - 6 µm


	Send Request 50 200 mm CZ N Antimony <100> 0.007 0.025 700 750 Prime 1 SEMI Flat Oxide Backseal Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.025 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal


	Send Request 50 200 mm CZ N Antimony <100> 0.007 0.02 700 750 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Send Request 25 200 mm CZ N Antimony <100> 0.008 0.03 700 750 Prime SSP Notch Poly Si Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Antimony

Res: .008-.03 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si backseal


	Send Request 275 200 mm CZ N Red Phosphorus <100> 0.0012 0.0017 700 750 Prime Non-SEMI Notch Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: <0.0017 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal




	Send Request 50 200 mm CZ N Red Phosphorus <100> 0.0017 0.0029 700 750 Prime Notch on the 0-1-0 Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Notch on the 0-1-0

Type/Dopant: n/Red Phosphorus

Res: 0.0017-.0029 ohm-cm

Thickness: 700-750 µm

Poly/Ox Back

No Scribe


	Send Request 37 200 mm CZ N Arsenic <100> Off 2° 0.001 0.0045 700 750 Prime Notch Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 2°

Flats: Notch on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.001 - 0.0045 ohm-cm

Thickness: 700 - 750 µm

Films: Oxide backseal  


	Send Request 3 200 mm CZ N Phosphorus <100> 1 10 700 750 Prime DSP Notch on the 1-1-0 10 0.12 1 10 10 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 17 200 mm CZ N Phosphorus <100> 20 40 700 750 Prime DSP Notch on the 0-0-1 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 0-0-1

Type/Dopant: n/Phosphorus

Res: 20 - 40 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 26 200 mm CZ N Phosphorus <100> 25 50 700 750 Prime DSP Notch on the 1-0-0 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Phosphorus

Res: 25 - 50 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 25 200 mm CZ N Phosphorus <100> 6 12 650 700 Epi Notch Poly Si/Oxide Back Backside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 6 - 12 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Send Request 50 200 mm CZ P Boron <100> 0.005 0.01 700 750 Epi DSP 1 SEMI Flat Oxide Backseal 3500 2 0 34 Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: p/Boron

Res: 0.005 - 0.01 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Send Request 25 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-1-0 Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Frontside

Films: Poly/Oxide backseal

Epi Res: 28-42 ohm-cm

Epi Thickness: 14.25-15.75 µm


	Send Request 15 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-0-0 Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Backside

Films: Oxide backseal

Epi Res: 2.5-3.5 ohm-cm

Epi Thickness: 5.6-6.4 µm


	Send Request 150 200 mm CZ P Boron <100> 3 30 700 750 Prime SSP JEIDA Flat 100 0.16 3 20 Any Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 3-30 ohm-cm

Thickness: 695-755 µm

Lasermark: Optional


	Send Request 31 200 mm CZ P Boron <100> 8 12 700 750 Prime DSP JEIDA Flat 50 0.065 Frontside HOLD FOR QUOTE 034457 po IN ROUTE

Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8.5-11.5 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front Scribe


	Send Request 9 200 mm CZ P Boron <100> 8 12 700 750 Prime SSP JEIDA Flat Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Jeida Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8 - 12 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Buff Back


	Send Request 1 200 mm CZ P Boron <100> 750 3500 700 750 SOI DSP Notch Oxide Backseal Notch Backside Diameter: 200mm 

Growth Method: CZ

Grade: SOI

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: 750 - 3,500 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal




	Request More Qty Available Diameter Material Type Dopant Orientation Res. (Min) Res. (Max) Thickness (Min) Thickness (Max) Grade Finish Flat Film Film Thickness Particle Count Particle Size TTV Bow Warp Lasermark Description




	Send Request 829 2" CZ N Phosphorus <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 None Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 719 2" CZ N Phosphorus <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 Ohmcm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 1035 2" CZ N Phosphorus <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 473 2" CZ P Boron <100> 0.01 0.02 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 254 - 304 µm

TTV:  <10 µm

Particles: <10@.5 µm


	Send Request 18 2" CZ P Boron <100> 1 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Send Request 750 2" CZ P Boron <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 633 2" CZ P Boron <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Send Request 576 2" CZ P Boron <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 37 3" CZ N Phosphorus <100> 1 5 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 200 3" CZ N Phosphorus <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 33 3" CZ N Phosphorus <100> 10 20 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 10 3" CZ N Phosphorus <100> 5 10 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 44 3" CZ P Boron <100> 1 10 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI Flats

Type/Dopant: p/Boron

Res: 1 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm 

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 255 3" CZ P Boron <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 12 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 415 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 398 100 mm CZ N Phosphorus <100> 1 10 500 550 Prime DSP 2 SEMI Flats 10 0.5 10 40 None Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@.5 µm


	Send Request 464 100 mm CZ N Phosphorus <100> 1 5 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 213 100 mm CZ N Phosphorus <100> 10 20 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 445 100 mm CZ N Phosphorus <100> 5 10 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 159 100 mm CZ P Boron <100> 0.01 0.02 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 196 100 mm CZ P Boron <100> 0 0.005 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: <0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 25 150 mm CZ P Boron <100> 1 100 600 650 Test SSP JEIDA Flat 30 0.3 6" P<100> 1-100 OHM

600-650um SSP

Jeida Flat


	Send Request 48 125 mm CZ N Antimony <100> 0.01 0.02 500 550 Prime SSP 1 SEMI Flat Oxide Backseal Frontside M13 Scribe Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Oxide backseal

Lasermark: Frontside M13


	Send Request 95 125 mm CZ N Arsenic <111> Off 4° 0.004 500 550 Prime SSP 1 SEMI Flat None Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> Off 4°

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: <0.004 ohm-cm

Thickness: 500 - 550 µm


	Send Request 96 125 mm CZ P Boron <111> 0.008 0.02 500 550 Prime SSP 1 SEMI Flat Poly Si Back Frontside Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 3°

Flats: 1 SEMI standard

Type/Dopant: p/Boron

Res: 0.008 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13


	Send Request 38 150 mm CZ N Arsenic <100> 0.001 0.003 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 1-0-0

Type/Dopant: n/Arsenic

Res: <0.003 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Back scribe


	Send Request 200 150 mm CZ N Arsenic <100> 0.002 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.002 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Send Request 725 150 mm CZ N Arsenic <100> 0.004 0.007 483 533 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.004 - 0.007 ohm-cm

Thickness: 483 - 533 µm

Films: Oxide backseal

Lasermark: Front scribe   


	Send Request 172 150 mm CZ N Antimony <100> 0.007 0.02 600 650 Prime 1 SEMI Flat Oxide Backseal None Diameter: 150mm 

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 600 - 650 µm

Films: Oxide backseal


	Send Request 23 150 mm CZ N Antimony <100> 0.008 0.025 500 550 Prime 1 SEMI Flat Poly Si/Oxide Back None 6" N/Sb <100> .008-.025 ohm-cm

500-550um Epi Wafers

Poly/Ox Back

No Scribe

Semi Flat on the 1-1-0  


	Send Request 75 150 mm CZ N Antimony <100> 0.01 0.025 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.025 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Front scribe


	Send Request 25 150 mm CZ N Antimony <100> 0.01 0.02 350 400 Epi SSP 1 SEMI Flat Poly Si/Oxide Back Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 350 - 400 µm

Films: Poly Si/Oxide backseal


	Send Request 25 150 mm CZ N Arsenic <100> 0.0001 0.0044 500 550 Prime SSP JEIDA Flat Poly Si/Oxide Back 20 0.3 10 40 None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat

Type/Dopant: n/Arsenic

Res: 0.0001 - 0.0044 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal


	Send Request 25 150 mm CZ N Antimony <111> 0.008 0.016 440 490 Epi JEIDA Flat Poly Si/Oxide Back 6" N/Sb <111> .008-.016 ohm

440-490um EPI Wafers

Jeida flat on the 1-1-0

Poly/Ox Back


	Send Request 24 150 mm CZ N Antimony <111> 0.008 0.017 600 650 Prime SSP 1 SEMI Flat Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> 

Flats: 1 SEMI standard on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.017 ohm-cm

Thickness: 600 - 650 µm


	Send Request 596 150 mm CZ P Boron <100> 0.0018 0.003 550 600 Prime Flat on the 1-0-0 Poly Si/Oxide Back Frontside M13 Scribe Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0018 - 0.003 ohm-cm

Thickness: 550 - 600 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13 Scribe


	Send Request 125 150 mm CZ P Boron <100> 0.0001 0.005 650 700 Epi SSP 1 Flat Non-SEMI Poly Si/Oxide Back 6000 30 0.3 5 85 Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Front scribe

Films: Poly Si/Oxide backesal


	Send Request 1275 150 mm CZ P Boron <100> 0.0001 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Send Request 32 150 mm CZ P Boron <100> 5 10 495 555 Epi SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 495 - 555 µm


	Send Request 24 150 mm CZ P Boron <100> 70 100 525 575 Prime SSP JEIDA Flat 40 0.16 3 3 17 None 6" P<100> 70-100 ohm-cm

525-575um SSP Wafers

No Scribe

Jeida flat on the 1-1-0


	Send Request 25 150 mm CZ P Boron <100> Off 4° 70 100 525 575 Prime SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 4°

Flats: JEIDA flat on the 1-1-0

Type/Dopant: P/boron 

Res: 70 - 100 ohm-cm

Thickness: 525 - 575 µm

Films: Poly Si/Oxide backseal


	Send Request 749 150 mm CZ P Boron <100> 5 10 505 535 Epi JEIDA Flat Backside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

Lasermark: Back scribe


	Send Request 50 150 mm CZ P Boron <111> Off 4° 0.008 0.015 600 650 Prime SSP 1 SEMI Flat Poly Si/Oxide Back 6000 12 0.3 10 50 50 Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 4°

Flats: 1 SEMI standard flat on the 0-1-1

Type/Dopant: p/Boron

Res: 0.008 - 0.015 ohm-cm

Thickness: 600 - 650 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Send Request 65 200 mm CZ N Red Phosphorus <100> 0.001 0.002 700 750 Epi SSP Notch Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: 0.001 - 0.002 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal

Epi Res: 0.1 - 0.2 ohm-cm

Epi Thickness: 4 - 6 µm


	Send Request 50 200 mm CZ N Antimony <100> 0.007 0.025 700 750 Prime 1 SEMI Flat Oxide Backseal Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.025 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal


	Send Request 50 200 mm CZ N Antimony <100> 0.007 0.02 700 750 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Send Request 25 200 mm CZ N Antimony <100> 0.008 0.03 700 750 Prime SSP Notch Poly Si Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Antimony

Res: .008-.03 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si backseal


	Send Request 275 200 mm CZ N Red Phosphorus <100> 0.0012 0.0017 700 750 Prime Non-SEMI Notch Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: <0.0017 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal




	Send Request 50 200 mm CZ N Red Phosphorus <100> 0.0017 0.0029 700 750 Prime Notch on the 0-1-0 Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Notch on the 0-1-0

Type/Dopant: n/Red Phosphorus

Res: 0.0017-.0029 ohm-cm

Thickness: 700-750 µm

Poly/Ox Back

No Scribe


	Send Request 37 200 mm CZ N Arsenic <100> Off 2° 0.001 0.0045 700 750 Prime Notch Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 2°

Flats: Notch on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.001 - 0.0045 ohm-cm

Thickness: 700 - 750 µm

Films: Oxide backseal  


	Send Request 3 200 mm CZ N Phosphorus <100> 1 10 700 750 Prime DSP Notch on the 1-1-0 10 0.12 1 10 10 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 17 200 mm CZ N Phosphorus <100> 20 40 700 750 Prime DSP Notch on the 0-0-1 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 0-0-1

Type/Dopant: n/Phosphorus

Res: 20 - 40 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 26 200 mm CZ N Phosphorus <100> 25 50 700 750 Prime DSP Notch on the 1-0-0 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Phosphorus

Res: 25 - 50 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 25 200 mm CZ N Phosphorus <100> 6 12 650 700 Epi Notch Poly Si/Oxide Back Backside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 6 - 12 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Send Request 50 200 mm CZ P Boron <100> 0.005 0.01 700 750 Epi DSP 1 SEMI Flat Oxide Backseal 3500 2 0 34 Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: p/Boron

Res: 0.005 - 0.01 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Send Request 25 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-1-0 Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Frontside

Films: Poly/Oxide backseal

Epi Res: 28-42 ohm-cm

Epi Thickness: 14.25-15.75 µm


	Send Request 15 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-0-0 Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Backside

Films: Oxide backseal

Epi Res: 2.5-3.5 ohm-cm

Epi Thickness: 5.6-6.4 µm


	Send Request 150 200 mm CZ P Boron <100> 3 30 700 750 Prime SSP JEIDA Flat 100 0.16 3 20 Any Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 3-30 ohm-cm

Thickness: 695-755 µm

Lasermark: Optional


	Send Request 31 200 mm CZ P Boron <100> 8 12 700 750 Prime DSP JEIDA Flat 50 0.065 Frontside HOLD FOR QUOTE 034457 po IN ROUTE

Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8.5-11.5 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front Scribe


	Send Request 9 200 mm CZ P Boron <100> 8 12 700 750 Prime SSP JEIDA Flat Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Jeida Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8 - 12 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Buff Back


	Send Request 1 200 mm CZ P Boron <100> 750 3500 700 750 SOI DSP Notch Oxide Backseal Notch Backside Diameter: 200mm 

Growth Method: CZ

Grade: SOI

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: 750 - 3,500 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal




	Request More Qty Available Diameter Material Type Dopant Orientation Res. (Min) Res. (Max) Thickness (Min) Thickness (Max) Grade Finish Flat Film Film Thickness Particle Count Particle Size TTV Bow Warp Lasermark Description




	Send Request 829 2" CZ N Phosphorus <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 None Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 719 2" CZ N Phosphorus <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 Ohmcm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 1035 2" CZ N Phosphorus <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 473 2" CZ P Boron <100> 0.01 0.02 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 254 - 304 µm

TTV:  <10 µm

Particles: <10@.5 µm


	Send Request 18 2" CZ P Boron <100> 1 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Send Request 750 2" CZ P Boron <100> 1 5 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 1 - 5 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 633 2" CZ P Boron <100> 10 20 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 254 - 304 µm

TTV <10 µm

Particles: <10@.5 µm


	Send Request 576 2" CZ P Boron <100> 5 10 254 304 Prime SSP 2 SEMI Flats 10 0.5 10 Diameter: 2"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 254 - 304 µm

TTV: <10 µm

Particles: <10@.5 µm


	Send Request 37 3" CZ N Phosphorus <100> 1 5 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 200 3" CZ N Phosphorus <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 33 3" CZ N Phosphorus <100> 10 20 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 10 3" CZ N Phosphorus <100> 5 10 356 406 Prime SSP 2 SEMI Flats 15 0.5 15 30 Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <15@.5 µm


	Send Request 44 3" CZ P Boron <100> 1 10 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI Flats

Type/Dopant: p/Boron

Res: 1 - 10 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm 

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 255 3" CZ P Boron <100> 10 20 356 406 Prime DSP 2 SEMI Flats 10 0.5 15 30 None Diameter: 3"

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 10 - 20 ohm-cm

Thickness: 356 - 406 µm

TTV: <15 µm

Bow: <30 µm

Particles: <10@.5 µm


	Send Request 12 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 415 100 mm CZ N Arsenic <100> 0.001 0.005 500 550 Prime SSP 2 SEMI Flats 0.3 10 40 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Arsenic

Res: 0.001 - 0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 398 100 mm CZ N Phosphorus <100> 1 10 500 550 Prime DSP 2 SEMI Flats 10 0.5 10 40 None Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@.5 µm


	Send Request 464 100 mm CZ N Phosphorus <100> 1 5 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 1 - 5 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 213 100 mm CZ N Phosphorus <100> 10 20 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 10 - 20 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 445 100 mm CZ N Phosphorus <100> 5 10 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: n/Phosphorus

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 159 100 mm CZ P Boron <100> 0.01 0.02 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 196 100 mm CZ P Boron <100> 0 0.005 500 550 Prime SSP 2 SEMI Flats 10 0.3 10 40 Diameter: 100 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 2 SEMI standard

Type/Dopant: p/Boron

Res: <0.005 ohm-cm

Thickness: 500 - 550 µm

TTV: <10 µm

Bow: <40 µm

Particles: <10@0.3 µm


	Send Request 25 150 mm CZ P Boron <100> 1 100 600 650 Test SSP JEIDA Flat 30 0.3 6" P<100> 1-100 OHM

600-650um SSP

Jeida Flat


	Send Request 48 125 mm CZ N Antimony <100> 0.01 0.02 500 550 Prime SSP 1 SEMI Flat Oxide Backseal Frontside M13 Scribe Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Oxide backseal

Lasermark: Frontside M13


	Send Request 95 125 mm CZ N Arsenic <111> Off 4° 0.004 500 550 Prime SSP 1 SEMI Flat None Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> Off 4°

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: <0.004 ohm-cm

Thickness: 500 - 550 µm


	Send Request 96 125 mm CZ P Boron <111> 0.008 0.02 500 550 Prime SSP 1 SEMI Flat Poly Si Back Frontside Diameter: 125 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 3°

Flats: 1 SEMI standard

Type/Dopant: p/Boron

Res: 0.008 - 0.02 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13


	Send Request 38 150 mm CZ N Arsenic <100> 0.001 0.003 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 1-0-0

Type/Dopant: n/Arsenic

Res: <0.003 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Back scribe


	Send Request 200 150 mm CZ N Arsenic <100> 0.002 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.002 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Send Request 725 150 mm CZ N Arsenic <100> 0.004 0.007 483 533 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.004 - 0.007 ohm-cm

Thickness: 483 - 533 µm

Films: Oxide backseal

Lasermark: Front scribe   


	Send Request 172 150 mm CZ N Antimony <100> 0.007 0.02 600 650 Prime 1 SEMI Flat Oxide Backseal None Diameter: 150mm 

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 600 - 650 µm

Films: Oxide backseal


	Send Request 23 150 mm CZ N Antimony <100> 0.008 0.025 500 550 Prime 1 SEMI Flat Poly Si/Oxide Back None 6" N/Sb <100> .008-.025 ohm-cm

500-550um Epi Wafers

Poly/Ox Back

No Scribe

Semi Flat on the 1-1-0  


	Send Request 75 150 mm CZ N Antimony <100> 0.01 0.025 600 650 Prime SSP JEIDA Flat Poly Si/Oxide Back Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.025 ohm-cm

Thickness: 600 - 650 µm

Films: Poly Si/Oxide backseal

Lasermark: Front scribe


	Send Request 25 150 mm CZ N Antimony <100> 0.01 0.02 350 400 Epi SSP 1 SEMI Flat Poly Si/Oxide Back Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI standard

Type/Dopant: n/Antimony

Res: 0.01 - 0.02 ohm-cm

Thickness: 350 - 400 µm

Films: Poly Si/Oxide backseal


	Send Request 25 150 mm CZ N Arsenic <100> 0.0001 0.0044 500 550 Prime SSP JEIDA Flat Poly Si/Oxide Back 20 0.3 10 40 None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: JEIDA flat

Type/Dopant: n/Arsenic

Res: 0.0001 - 0.0044 ohm-cm

Thickness: 500 - 550 µm

Films: Poly Si/Oxide backseal


	Send Request 25 150 mm CZ N Antimony <111> 0.008 0.016 440 490 Epi JEIDA Flat Poly Si/Oxide Back 6" N/Sb <111> .008-.016 ohm

440-490um EPI Wafers

Jeida flat on the 1-1-0

Poly/Ox Back


	Send Request 24 150 mm CZ N Antimony <111> 0.008 0.017 600 650 Prime SSP 1 SEMI Flat Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP - Soft BSD

Orientation: <111> 

Flats: 1 SEMI standard on the 0-1-1

Type/Dopant: n/Antimony

Res: 0.008 - 0.017 ohm-cm

Thickness: 600 - 650 µm


	Send Request 596 150 mm CZ P Boron <100> 0.0018 0.003 550 600 Prime Flat on the 1-0-0 Poly Si/Oxide Back Frontside M13 Scribe Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0018 - 0.003 ohm-cm

Thickness: 550 - 600 µm

Films: Poly Si/Oxide backseal

Lasermark: Frontside M13 Scribe


	Send Request 125 150 mm CZ P Boron <100> 0.0001 0.005 650 700 Epi SSP 1 Flat Non-SEMI Poly Si/Oxide Back 6000 30 0.3 5 85 Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: 1 SEMI flat on the 1-0-0

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Front scribe

Films: Poly Si/Oxide backesal


	Send Request 1275 150 mm CZ P Boron <100> 0.0001 0.005 350 400 Prime SSP JEIDA Flat Oxide Backseal Frontside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: JEIDA flat

Type/Dopant: p/Boron

Res: 0.0001 - 0.005 ohm-cm

Thickness: 350 - 400 µm

Films: Oxide backseal


	Send Request 32 150 mm CZ P Boron <100> 5 10 495 555 Epi SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 495 - 555 µm


	Send Request 24 150 mm CZ P Boron <100> 70 100 525 575 Prime SSP JEIDA Flat 40 0.16 3 3 17 None 6" P<100> 70-100 ohm-cm

525-575um SSP Wafers

No Scribe

Jeida flat on the 1-1-0


	Send Request 25 150 mm CZ P Boron <100> Off 4° 70 100 525 575 Prime SSP JEIDA Flat Poly Si/Oxide Back None Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 4°

Flats: JEIDA flat on the 1-1-0

Type/Dopant: P/boron 

Res: 70 - 100 ohm-cm

Thickness: 525 - 575 µm

Films: Poly Si/Oxide backseal


	Send Request 749 150 mm CZ P Boron <100> 5 10 505 535 Epi JEIDA Flat Backside Diameter: 150 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 JEIDA flat on the 1-1-0

Type/Dopant: p/Boron

Res: 5 - 10 ohm-cm

Thickness: 500 - 550 µm

Lasermark: Back scribe


	Send Request 50 150 mm CZ P Boron <111> Off 4° 0.008 0.015 600 650 Prime SSP 1 SEMI Flat Poly Si/Oxide Back 6000 12 0.3 10 50 50 Backside Diameter: 150 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <111> Off 4°

Flats: 1 SEMI standard flat on the 0-1-1

Type/Dopant: p/Boron

Res: 0.008 - 0.015 ohm-cm

Thickness: 600 - 650 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Send Request 65 200 mm CZ N Red Phosphorus <100> 0.001 0.002 700 750 Epi SSP Notch Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: 0.001 - 0.002 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal

Epi Res: 0.1 - 0.2 ohm-cm

Epi Thickness: 4 - 6 µm


	Send Request 50 200 mm CZ N Antimony <100> 0.007 0.025 700 750 Prime 1 SEMI Flat Oxide Backseal Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.025 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal


	Send Request 50 200 mm CZ N Antimony <100> 0.007 0.02 700 750 Prime 1 SEMI Flat Oxide Backseal Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: n/Antimony

Res: 0.007 - 0.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Send Request 25 200 mm CZ N Antimony <100> 0.008 0.03 700 750 Prime SSP Notch Poly Si Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Antimony

Res: .008-.03 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si backseal


	Send Request 275 200 mm CZ N Red Phosphorus <100> 0.0012 0.0017 700 750 Prime Non-SEMI Notch Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-0-0

Type/Dopant: n/Red Phosphorus

Res: <0.0017 ohm-cm

Thickness: 700 - 750 µm

Films: Poly Si/Oxide backseal




	Send Request 50 200 mm CZ N Red Phosphorus <100> 0.0017 0.0029 700 750 Prime Notch on the 0-1-0 Poly Si/Oxide Back None Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Notch on the 0-1-0

Type/Dopant: n/Red Phosphorus

Res: 0.0017-.0029 ohm-cm

Thickness: 700-750 µm

Poly/Ox Back

No Scribe


	Send Request 37 200 mm CZ N Arsenic <100> Off 2° 0.001 0.0045 700 750 Prime Notch Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100> Off 2°

Flats: Notch on the 1-1-0

Type/Dopant: n/Arsenic

Res: 0.001 - 0.0045 ohm-cm

Thickness: 700 - 750 µm

Films: Oxide backseal  


	Send Request 3 200 mm CZ N Phosphorus <100> 1 10 700 750 Prime DSP Notch on the 1-1-0 10 0.12 1 10 10 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 1 - 10 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 17 200 mm CZ N Phosphorus <100> 20 40 700 750 Prime DSP Notch on the 0-0-1 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 0-0-1

Type/Dopant: n/Phosphorus

Res: 20 - 40 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 26 200 mm CZ N Phosphorus <100> 25 50 700 750 Prime DSP Notch on the 1-0-0 20 0.16 1 5 20 Backside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: n/Phosphorus

Res: 25 - 50 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe


	Send Request 25 200 mm CZ N Phosphorus <100> 6 12 650 700 Epi Notch Poly Si/Oxide Back Backside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100> 

Flats: Notch on the 1-1-0

Type/Dopant: n/Phosphorus

Res: 6 - 12 ohm-cm

Thickness: 650 - 700 µm

Lasermark: Back scribe

Films: Poly Si/Oxide backseal


	Send Request 50 200 mm CZ P Boron <100> 0.005 0.01 700 750 Epi DSP 1 SEMI Flat Oxide Backseal 3500 2 0 34 Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: DSP

Orientation: <100> 

Flats: 1 SEMI flat on the 1-1-0

Type/Dopant: p/Boron

Res: 0.005 - 0.01 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Films: Oxide backseal


	Send Request 25 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-1-0 Poly Si/Oxide Back Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Frontside

Films: Poly/Oxide backseal

Epi Res: 28-42 ohm-cm

Epi Thickness: 14.25-15.75 µm


	Send Request 15 200 mm CZ P Boron <100> 0.01 0.02 700 750 Epi SSP Notch on the 1-0-0 Oxide Backseal Diameter: 200 mm

Growth Method: CZ

Grade: Epi

Finish: SSP

Orientation: <100>

Flats: Notch on the 1-0-0

Type/Dopant: p/Boron

Res: .01-.02 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Backside

Films: Oxide backseal

Epi Res: 2.5-3.5 ohm-cm

Epi Thickness: 5.6-6.4 µm


	Send Request 150 200 mm CZ P Boron <100> 3 30 700 750 Prime SSP JEIDA Flat 100 0.16 3 20 Any Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 3-30 ohm-cm

Thickness: 695-755 µm

Lasermark: Optional


	Send Request 31 200 mm CZ P Boron <100> 8 12 700 750 Prime DSP JEIDA Flat 50 0.065 Frontside HOLD FOR QUOTE 034457 po IN ROUTE

Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: DSP

Orientation: <100>

Flats: Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8.5-11.5 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front Scribe


	Send Request 9 200 mm CZ P Boron <100> 8 12 700 750 Prime SSP JEIDA Flat Frontside Diameter: 200 mm

Growth Method: CZ

Grade: Prime

Finish: SSP

Orientation: <100>

Flats: Jeida Flat on the 1-1-0

Type/Dopant: p/Boron

Res: 8 - 12 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Front scribe

Buff Back


	Send Request 1 200 mm CZ P Boron <100> 750 3500 700 750 SOI DSP Notch Oxide Backseal Notch Backside Diameter: 200mm 

Growth Method: CZ

Grade: SOI

Finish: DSP

Orientation: <100>

Flats: Notch on the 1-1-0

Type/Dopant: p/Boron

Res: 750 - 3,500 ohm-cm

Thickness: 700 - 750 µm

Lasermark: Back scribe

Films: Oxide backseal