The Active Business Company GmbH offers wafer services according to the demands of our customers. Due to our established service network our portfolio increases continuously.

Currently the following services can be provided

Thermal Oxidation

Thermal oxidation of Silicon in the field of semiconductors is a deposition technology to process a layer of Silicon-Dioxide onto the surface of a Silicon Wafer. Among other things it´s used for manufacturing of microelectronic circuits. The coating process is based on a chemical reaction of oxygen and silicon at temperatures between 900 ° C and 1100 ° C.

Wet Thermal Oxide

  • Wet Thermal Oxide thickness from 100 nm up to 15000 nm

Dry Thermal Oxide

  • Dry Thermal Oxide thickness from 10 nm up to 300 nm
  • Dry Chlorinated Thermal Oxide thickness from 10 nm up to 300 nm


  • Thermal Annealing
  • Forming Gas Anneal
  • gustomer specific temperature and ramp rates
  • Standard SEMIStd. Silicon Wafers and other special geometries

Silicon Nitride

Silicon Nitride Silicon in the field of semiconductors is used as an isolation or passivation layer for processing integrated circuits.

In addition, it is used in many processes as masking and stopping material, for example at local oxidation of Silicon Wafers. The advantage here is a different chemical behavior to caustics compared to the standard material Silicon Dioxide, thus caustics can be used which react with Silicon Dioxide but not with Silicon Nitride, or vice versa.

LPCVD Nitride (both side coating)

  • Stoichiometric Nitride (Filmstress >800 MPa)
  • Low Stress Nitrid (Filmstress <250 MPa)
  • Super Low Stress Nitrid (Filmstress <100 MPa)

PECVD Nitride (one side coating)

  • Stoichiometric Nitride (Filmstress >400 MPa)
  • Low Stress Nitride (Filmstress <250 MPa)

Further Coatings:

  • Titanium (Ti)
  • Titanium-Nitride (TiN)
  • Chrome (Cr)
  • Gold (Au)
  • Aluminium (Al, AlCu)
  • Copper (Cu)
  • Nickel (Ni)
  • Tantalum (Ta)
  • Tungsten (W)
  • Silicon-Carbide (SiC)
  • Silicon-Nitride (SiN)
  • and more

Lasercutting & Scribing

  • Diameter reduction and special geometry cuts
  • Format: According to SemiStd. or customer specific
  • LM depth from 4 µm (soft laser mark) to 60 µm (hard laser mark)
  • LM in vector or dot matrix 


Wafer thinning

  • 2″, 3“, 4″ Si-Wafers up to 10-20µm
  • 6” Silicon Wafers down to 50 µm thickness
  • 12” Silicon wafers down to 200 µm thickness
  • single side polishing (SSP) and double side polishing (DSP) processing

We are pleased to deliver Si-Wafers according to your individual requirements. In case of any questions, please do not hesitate to contact us. Requests could also be sent through our request form.