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SOI-WAFER 2018-06-02T02:32:12+00:00

SOI-Wafer

The Active Business Company GmbH offers SOI (Silicon on Insulator)-Wafer with multiple specifications. This includes Thick-Film-SOI with a device layer of >2 µm as well as Thin-Film-SOI with a device layer of <2 µm.

Thick-Film-SOI

Two oxidized Si-Wafers are bonded together following by polishing. The diameter of these SOI-Wafers is usually between 3” and 8”. The Device-Wafer (DW) has a thickness between 2 µm up to 150 µm, the Handle-Wafer´s (HW) thickness is between 250 µm and 725 µm. The Oxide-Layer between the Device Wafer and Handle Wafer (Buried Oxide) has a thickness between 0,1 µm and 15 µm.

Thin-Film-SOI

Thin-Film-SOI-Wafers are processed by an oxygen ion beam implantation process followed by high temperature annealing to create a Buried Oxide layer. The process is called SIMOX (Separation by IMplantation of Oxygen). The diameter of these SOI-Wafers is usually between 6” and 8”. The Device-Wafer (DW) has a thickness between 0,05 µm up to 2 µm, the Handle-Wafer´s (HW) thickness is between 250 µm and 725 µm. The Oxide-Layer between the Device Wafer and Handle Wafer has a thickness between 0,05 µm and 0,4 µm.

SOI-Wafer Specifications

Typical Specification:
Technology used
Diameters
Device Layer Thickness
Buried Oxyde
Handle Wafer Thickness

Thick-Film-SOI:
Bonding and Polishing
3″ – 8″
2 µm – 150 µm
0,1 µm – 15 µm
250 µm – 725 µm

Thick-Film-SOI:
SIMOX and others
6″ – 8″
0,05 µm – 2 µm
0,05 µm – 0,4 µm
250 µm – 725 µm

We are pleased to deliver SOI-Wafers according to your individual requirements. In case of any questions, please do not hesitate to contact us. Requests could also be sent through our request form.

Request Form